5秒后页面跳转
捷配首页

Datasheet > NSBA124EDXV6T1
NSBA124EDXV6T1 PDF预览

NSBA124EDXV6T1

更新时间： 2024-11-25 19:54:51
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
12页 157K
描述
100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN

阅读下载

中文翻译

获取价格

NSBA124EDXV6T1 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：PLASTIC, CASE 463A-01, 6 PIN针数：6
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.48其他特性：BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：60
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSBA124EDXV6T1 数据手册

 浏览型号NSBA124EDXV6T1的Datasheet PDF文件第2页浏览型号NSBA124EDXV6T1的Datasheet PDF文件第3页浏览型号NSBA124EDXV6T1的Datasheet PDF文件第4页浏览型号NSBA124EDXV6T1的Datasheet PDF文件第5页浏览型号NSBA124EDXV6T1的Datasheet PDF文件第6页浏览型号NSBA124EDXV6T1的Datasheet PDF文件第7页 
NSBA114EDXV6T1,  
NSBA114EDXV6T5  
Preferred Devices  
Dual Bias Resistor  
Transistors  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
(3)  
(2)  
(1)  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSBA114EDXV6T1  
series, two BRT devices are housed in the SOT−563 package which is  
ideal for low−power surface mount applications where board space is  
at a premium.  
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Available in 8 mm, 7 inch Tape and Reel  
• Lead Free Solder Plating  
4
5
6
3
2
1
SOT−563  
CASE 463A  
PLASTIC  
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
1
2
MARKING DIAGRAM  
Rating  
Symbol  
Value  
Unit  
Vdc  
Collector-Base Voltage  
V
V
−50  
−50  
CBO  
CEO  
xx D  
Collector-Emitter Voltage  
Collector Current  
Vdc  
I
C
−100  
mAdc  
xx = Specific Device Code  
(see table on page 2)  
THERMAL CHARACTERISTICS  
D
= Date Code  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
Total Device Dissipation  
T = 25°C  
P
357  
(Note 1)  
2.9  
mW  
A
D
Device  
Package  
Shipping  
Derate above 25°C  
mW/°C  
°C/W  
(Note 1)  
NSBA114EDXV6T1 SOT−563  
4 mm pitch  
4000/Tape & Reel  
Thermal Resistance Junction-to-Ambient  
R
350  
q
JA  
(Note 1)  
NSBA114EDXV6T5 SOT−563  
2 mm pitch  
Characteristic  
8000/Tape & Reel  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
T = 25°C  
P
500  
(Note 1)  
4.0  
mW  
A
D
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
Derate above 25°C  
mW/°C  
°C/W  
°C  
(Note 1)  
Thermal Resistance Junction-to-Ambient  
R
250  
(Note 1)  
q
JA  
Preferred devices are recommended choices for future use  
and best overall value.  
Junction and Storage  
Temperature Range  
T , T  
J
−55 to  
+150  
stg  
1. FR−4 @ Minimum Pad  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
January, 2004 − Rev. 3  
NSBA114EDXV6/D  
 
1234567...12

中文翻译

下载PDF

与NSBA124EDXV6T1相关器件

型号 品牌 获取价格 描述 数据表
NSBA124EDXV6T1G ONSEMI

获取价格

 		Dual PNP Bias Resistor Transistors R1 = 22 k, R2 = 22 k
NSBA124EDXV6T5 ROCHESTER

获取价格

 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA124EDXV6T5G ONSEMI

获取价格

 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBA124EF3 ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 22 k, R2 = 22 k
NSBA124EF3T5G ONSEMI

获取价格

 		Digital Transistors (BRT)
NSBA124XDXV6T1 ROCHESTER

获取价格

 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA124XDXV6T1G ONSEMI

获取价格

 		50V Dual PNP Bipolar Digital Transistor
NSBA124XDXV6T5G ONSEMI

获取价格

 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBA124XF3 ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 22 k, R2 = 47 k
NSBA124XF3T5G ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 22 k, R2 = 47 k

与NSBA124EDXV6T1相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证