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NSB8JT PDF预览

NSB8JT

更新时间: 2024-11-04 22:27:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
2页 87K
描述
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER

NSB8JT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.52
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 V最大非重复峰值正向电流:175 A
元件数量:1最高工作温度:150 °C
最大输出电流:8 A最大重复峰值反向电压:600 V
子类别:Rectifier Diodes表面贴装:YES
Base Number Matches:1

NSB8JT 数据手册

 浏览型号NSB8JT的Datasheet PDF文件第2页 
NEW PRODUCT  
NEW PRODUCT  
NEW PRODUCT  
NSB8AT THRU NSB8MT  
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER  
Reverse Voltage - 50 to 1000 Volts  
Forward Current - 8.0 Amperes  
TO-263AA  
FEATURES  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
High forward current capability  
High surge current capability  
0.160 (4.06)  
0.190 (4.83)  
0.380 (9.65)  
0.420 (10.67)  
0.045 (1.14)  
0.055 (1.40)  
0.245 (6.22)  
MIN  
Low forward voltage drop  
K
Glass passivated chip junction  
High temperature soldering in accordance with  
CECC 802 / Reflow guaranteed  
0.047 (1.19)  
0.320 (8.13)  
0.360 (9.14)  
0.055 (1.40)  
0.575 (14.60)  
0.625 (15.88)  
K
1
2
SEATING  
PLATE  
0.090 (2.29)  
-T-  
0.110 (2.79)  
MECHANICAL DATA  
Case: JEDEC TO-263AA molded plastic body  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
0.018 (0.46)  
0.025 (0.64)  
0.095 (2.41)  
0.100 (2.54)  
0.080 (2.03)  
0.110 (2.79)  
0.027 (0.686)  
0.037 (0.940)  
Polarity: As marked  
Mounting Position: Any  
Weight: 0.08 ounce, 2.24 grams  
PIN 1  
PIN 2  
K - HEATSINK  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
NSB8  
AT  
NSB8  
BT  
NSB8  
DT  
NSB8  
GT  
NSB8  
JT  
NSB8  
KT  
NSB8  
MT  
SYMBOLS  
VRRM  
VRMS  
VDC  
UNITS  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
8.0  
600  
420  
600  
800  
560  
800  
1000 Volts  
700 Volts  
Maximum DC blocking voltage  
100  
1000 Volts  
Amps  
Maximum average forward rectified current at TC=100°C  
I(AV)  
Peak forward surge current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
VF  
175.0  
1.1  
Amps  
Volts  
µA  
Maximum instantaneous forward voltage at 8.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TC=25°C  
IR  
10.0  
TC=100°C  
100.0  
Typical junction capacitance (NOTE 1)  
Typical thermal resistance (NOTE 2)  
CJ  
RΘJC  
55.0  
3.0  
pF  
°C/W  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
NOTES:  
(1) Measured at 1.0 MHz and applied reversed voltage of 4.0 Volts  
(2) Thermal resistance from junction to case mounted on heatsink  
4/98  

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