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NS8DTHE3_A/P PDF预览

NS8DTHE3_A/P

更新时间: 2024-11-12 15:46:55
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
5页 126K
描述
Rectifier Diode,

NS8DTHE3_A/P 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99Factory Lead Time:20 weeks 1 day
风险等级:5.64其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:125 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
参考标准:AEC-Q101最大重复峰值反向电压:200 V
最大反向电流:10 µA表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

NS8DTHE3_A/P 数据手册

 浏览型号NS8DTHE3_A/P的Datasheet PDF文件第2页浏览型号NS8DTHE3_A/P的Datasheet PDF文件第3页浏览型号NS8DTHE3_A/P的Datasheet PDF文件第4页浏览型号NS8DTHE3_A/P的Datasheet PDF文件第5页 
NS8xT, NSF8xT, NSB8xT  
Vishay General Semiconductor  
www.vishay.com  
Glass Passivated General Purpose Plastic Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Power pack  
• Glass passivated chip junction  
• Low forward voltage drop  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 245 °C (for TO-263AB package)  
2
2
1
1
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
(for TO-220AC and ITO-220AC package)  
NS8xT  
PIN 1  
NSF8xT  
PIN 1  
CASE  
• AEC-Q101 qualified available  
PIN 2  
PIN 2  
- Automotive ordering code: base P/NHE3  
TO-263AB  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
K
2
TYPICAL APPLICATIONS  
1
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes application.  
NSB8xT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant  
PRIMARY CHARACTERISTICS  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B,...)  
IF(AV)  
8.0 A  
VRRM  
IFSM  
50 V to 1000 V  
125 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
VF  
1.1 V  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
TJ max.  
150 °C  
TO-220AC, ITO-220AC,  
TO-263AB  
Package  
Polarity: As marked  
Diode variation  
Single  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL NS8AT NS8BT NS8DT NS8GT NS8JT NS8KT NS8MT UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
at TC = 100 °C  
IF(AV)  
8.0  
A
Peak forward surge current 8.3 ms single sine-wave  
IFSM  
TJ, TSTG  
VAC  
125  
-55 to +150  
1500  
A
°C  
V
superimposed on rated load  
Operating junction and storage temperature range  
Isolation voltage (ITO-220AC only)  
from terminal to heatsink t = 1 min  
Revision: 09-Feb-15  
Document Number: 88690  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

NS8DTHE3_A/P 替代型号

型号 品牌 替代类型 描述 数据表
NS8DTHE3/45 VISHAY

完全替代

DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R

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