Datasheet > NP89N04PDK

NP89N04PDK

更新时间： 2023-12-20 18:45:41

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	266K
描述
40 V – 90 A – N-channel Power MOS FET

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Preliminary Data Sheet

NP89N04PDK

40 V – 90 A – N-channel Power MOS FET

Application: Automotive

R07DS1016EJ0200

Rev.2.00

May 24, 2018

Description

The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications.

Features



Super low on-state resistance

_DS(on)= 2.95 m MAX. (V_GS= 10 V, I_D= 45 A)



Low C_iss: C_iss= 3900 pF TYP. (V_DS= 25 V)

Logic level drive type

Designed for automotive application and AEC-Q101 qualified

Ordering Information

Part No.

Lead Plating

Pure Sn (Tin)

Packing

Taping (E1 type)

Taping (E2 type)

Package

NP89N04PDK-E1-AY ^*1

NP89N04PDK-E2-AY ^*1

Tape 800 p/reel

TO-263 (MP-25ZP)

Note: *1 Pb-free (This product does not contain Pb in the external electrode)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

V_GSS

I_D(DC)

I_D(pulse)

P_T1

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25°C)

Drain Current (pulse) ^{*1, 3}

20

90

360

147

Total Power Dissipation (T_C= 25°C)

Total Power Dissipation (T_A= 25°C)

Channel Temperature

°C

P_T2

1.8

T_ch

175

Storage Temperature

T_stg

–55 to +175

Repetitive Avalanche Current ^{*2, 3}

Repetitive Avalanche Energy ^{*2, 3}

I_AR

E_AR

136

Thermal Resistance

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance

R_th(ch-C)*3

R_{th(ch-A) *3}

1.02

83.3

°C/W

Notes: *1 T_C= 25°C, P_W 10 s, Duty Cycle  1%

*2 R_G= 25 , V_GS= 20 V  0 V

*3. Not subject of production test. Verified by design/characterization.

R07DS1016EJ0200 Rev.2.00

May 24, 2018

Page 1 of 6

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