是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | MP-25SK | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.84 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 80 A |
最大漏极电流 (ID): | 80 A | 最大漏源导通电阻: | 0.0048 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 115 W | 最大脉冲漏极电流 (IDM): | 300 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NP80N04MLG-S18-AY | RENESAS |
功能相似 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04PLG-E1B-AY | RENESAS |
功能相似 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04PUG-E1B-AY | RENESAS |
功能相似 |
MOS FIELD EFFECT TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NP80N04NUG-S18-AYNote | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET | |
NP80N04PDG | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04PDG-E1B-AY | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04PDG-E2B-AY | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04PLG | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04PLG-E1B-AY | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04PLG-E1B-AYNote | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET | |
NP80N04PLG-E2B-AY | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04PLG-E2B-AYNote | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET | |
NP80N04PUG | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR |