是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | MP-25K | 包装说明: | LEAD FREE, MP-25K, TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.83 | Is Samacsys: | N |
其他特性: | LOGIC LEVEL COMPATIBLE | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (Abs) (ID): | 80 A | 最大漏极电流 (ID): | 80 A |
最大漏源导通电阻: | 0.0048 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 115 W |
最大脉冲漏极电流 (IDM): | 300 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NP80N04MLG-S18-AY | RENESAS |
功能相似 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04PLG-E1B-AY | RENESAS |
功能相似 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04PUG-E1B-AY | RENESAS |
功能相似 |
MOS FIELD EFFECT TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NP80N04MHE | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N04MHE-S18-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N04MLG | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04MLG_15 | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET | |
NP80N04MLG-S18-AY | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04MLG-S18-AYNote | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET | |
NP80N04NDG | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04NDG-S18-AY | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP80N04NHE | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP80N04NHE-S18-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |