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NP40N10PDF PDF预览

NP40N10PDF

更新时间: 2024-09-24 12:28:11
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
11页 162K
描述
100 V – 40 A – N-channel Power MOS FET Application: Automotive

NP40N10PDF 数据手册

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Preliminary Data Sheet  
NP40N10YDF, NP40N10VDF, NP40N10PDF  
100 V – 40 A – N-channel Power MOS FET  
Application: Automotive  
R07DS0361EJ0201  
Rev.2.01  
May 13, 2013  
Description  
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.  
Features  
Low on-state resistance  
RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF)  
RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF)  
RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF)  
Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V)  
Logic level drive type  
Designed for automotive application and AEC-Q101 qualified  
Outline  
Drain  
Body  
Diode  
Gate  
Source  
8-pin HSON  
TO-252  
TO-263  
4
5
4
6
7
8
4
2
1
2
1
3
3
2
3
1
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
1, 2, 3 : Source  
: Gate  
5, 6, 7, 8: Drain  
4
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and  
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity  
as much as possible, and quickly dissipate it once, when it has occurred.  
Ordering Information  
Part No.  
Lead Plating  
Pure Sn (Tin)  
Packing  
Taping (E1 type)  
Package  
8-pin HSON  
1
1
1
1
1
1
NP40N10YDF-E1-AY *  
NP40N10YDF-E2-AY *  
NP40N10VDF-E1-AY *  
NP40N10VDF-E2-AY *  
NP40N10PDF-E1-AY *  
NP40N10PDF-E2-AY *  
Tape 2500 p/reel  
Tape 2500 p/reel  
Tape 800 p/reel  
Taping (E2 type)  
Taping (E1 type)  
Taping (E2 type)  
Taping (E1 type)  
Taping (E2 type)  
Pure Sn (Tin)  
Pure Sn (Tin)  
TO-252 (MP-3ZP)  
TO-263 (MP-25ZP)  
Note: *1. Pb-free (This product does not contain Pb in the external electrode)  
R07DS0361EJ0201 Rev.2.01  
May 13, 2013  
Page 1 of 9  

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