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NP22N055HHE-AY

更新时间: 2024-09-23 19:56:39
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
9页 289K
描述
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,22A I(D),TO-251

NP22N055HHE-AY 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):22 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
子类别:FET General Purpose Power表面贴装:NO
Base Number Matches:1

NP22N055HHE-AY 数据手册

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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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