5秒后页面跳转
NP0G3A5 PDF预览

NP0G3A5

更新时间: 2024-01-18 06:52:41
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
6页 686K
描述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN

NP0G3A5 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.08 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):160
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

NP0G3A5 数据手册

 浏览型号NP0G3A5的Datasheet PDF文件第2页浏览型号NP0G3A5的Datasheet PDF文件第3页浏览型号NP0G3A5的Datasheet PDF文件第4页浏览型号NP0G3A5的Datasheet PDF文件第5页浏览型号NP0G3A5的Datasheet PDF文件第6页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors with built-in Resistor  
NP0G3A5  
Silicon PNP epitaxial planar type (Tr1)  
Silicon NPN epitaxial planar type (Tr2)  
For digital circuits  
Package  
Code  
Features  
SSSMini6-F1  
Pin Name  
1: Base (Tr1)  
2: ase (Tr2)  
ter (Tr2)  
Two elements incorporated into one package (Each transistor is separated)  
SSSMini package, reduction of the mounting area and assembly cost  
Maximum package height (0.4 mm) contributes to develop thinner equipment
4: Collector (Tr2)  
5: Emitter (Tr1)  
6: Collector (Tr1)  
Basic Part Number  
UNR31A5 + UNR32A5  
Markng Symbol: 3Q  
Absolute Maximum Ratings Ta = 25°C  
Internal Connection  
Parameter  
Symbol  
R
Unit  
(C1)  
6
(E1)  
5
(C2)  
4
Collector-base voltage  
(Emitter open)  
VCB
V
-50  
Collector-emitter voltge  
(Base open)  
Tr1  
Tr1  
VCO  
IC  
V
mA  
V
-50  
-80  
0  
Tr2  
10 k  
10 kΩ  
Collector current  
Collector-basvoltage  
(Emitter open)  
V
1
2
3
(B1)  
(B2)  
(E2)  
ollecor-evoltage  
Bae ope
Tr2  
VCE
50  
V
Colector current  
IC  
PT  
Tj  
80  
125  
mA  
mW  
°C  
Total power dissipaton *  
Junctie  
Storage t
125  
Overall  
T
stg  
–55 to+125  
°C  
Note) *: Measuring on subat 17 mm × 10 m × 1 mm  
Publication date: May 2008  
SJJ00412AED  
1

与NP0G3A5相关器件

型号 品牌 描述 获取价格 数据表
NP0G3D1 ETC Composite Device - Transistors with built-in Resistor

获取价格

NP0G3D2 PANASONIC Silicon PNP(NPN) epitaxial planar transistor (Tr1,2)

获取价格

NP0G3D3 ETC Composite Device - Transistors with built-in Resistor

获取价格

NP0H3A3 PANASONIC Silicon PNP epitaxial planar type (Tr1), Silicon NPN epitaxial planar type (Tr2)

获取价格

NP0J1A3 PANASONIC Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS C

获取价格

NP1.2-12 ETC BLEIAKKU 12V 600G

获取价格