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NM93CS06N

更新时间: 2024-11-05 22:44:51
品牌 Logo 应用领域
美国国家半导体 - NSC 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
14页 204K
描述
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read

NM93CS06N 数据手册

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August 1994  
NM93CS06/CS46/CS56/CS66  
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit  
Serial EEPROM with Data Protect and Sequential Read  
General Description  
The NM93CS06/CS46/CS56/CS66 devices are 256/  
1024/2048/4096 bits, respectively, of CMOS non-volatile  
electrically erasable memory divided into 16/64/128/  
256 16-bit registers. Selected registers can be protected  
against data modification by programming the Protect Reg-  
ister with the address of the first register to be protected  
against data modification (all registers greater than, or equal  
to, the selected address are then protected from further  
change). Additionally, this address can be ‘‘locked’’ into the  
device, making all future attempts to change data impossi-  
ble. These devices are fabricated using National Semicon-  
ductor floating-gate CMOS process for high reliability, high  
endurance and low power consumption. The NM93CSXX  
Family is offered in an SO package for small space consid-  
erations.  
READ, WRITE, WRITE ALL, WRITE ENABLE, and WRITE  
DISABLE. The Protect register instructions are PRREAD,  
PRWRITE, PRENABLE, PRCLEAR, and PRDISABLE.  
Features  
Y
Write protection in a user defined section of memory  
Y
Sequential register read  
Y
Typical active current of 400 mA and standby current of  
25 mA  
Y
No erase required before write  
Y
Reliable CMOS floating gate technology  
Y
MICROWIRE compatible serial I/O  
Y
Self timed write cycle  
Y
Device status during programming mode  
Y
The EEPROM interfacing is MICROWIRE compatible pro-  
viding simple interfacing to standard microcontrollers and  
microprocessors. There are a total of 10 instructions, 5  
which operate on the EEPROM memory, and 5 which oper-  
ate on the Protect Register. The memory instructions are  
40 year data retention  
6
Endurance: 10 data changes  
Y
Y
Y
4.5V to 5.5V operation in all modes of operation  
Packages available: 8-pin SO, 8-pin DIP  
Block Diagram  
TL/D/10750–1  
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.  
MICROWIRETM is a trademark of National Semiconductor Corporation.  
C
1995 National Semiconductor Corporation  
TL/D/10750  
RRD-B30M75/Printed in U. S. A.  

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