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NM93CS06LVN PDF预览

NM93CS06LVN

更新时间: 2024-11-06 10:25:35
品牌 Logo 应用领域
美国国家半导体 - NSC 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
14页 181K
描述
256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) and Data Protect (MICROWIRE-TM Bus Interface)

NM93CS06LVN 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:DIP, DIP8,.3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.82Is Samacsys:N
最大时钟频率 (fCLK):0.25 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDIP-T8
JESD-609代码:e0长度:9.817 mm
内存密度:256 bit内存集成电路类型:EEPROM
内存宽度:16功能数量:1
端子数量:8字数:16 words
字数代码:16工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:16X16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/5 V
认证状态:Not Qualified座面最大高度:5.08 mm
串行总线类型:MICROWIRE最大待机电流:0.00005 A
子类别:EEPROMs最大压摆率:0.001 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
最长写入周期时间 (tWC):15 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

NM93CS06LVN 数据手册

 浏览型号NM93CS06LVN的Datasheet PDF文件第2页浏览型号NM93CS06LVN的Datasheet PDF文件第3页浏览型号NM93CS06LVN的Datasheet PDF文件第4页浏览型号NM93CS06LVN的Datasheet PDF文件第5页浏览型号NM93CS06LVN的Datasheet PDF文件第6页浏览型号NM93CS06LVN的Datasheet PDF文件第7页 
August 1996  
NM93CS06L/CS46L/CS56L/CS66L  
256-/1024-/2048-/4096-Bit Serial EEPROM  
with Extended Voltage (2.7V to 5.5V) and Data Protect  
(MICROWIRETM Bus Interface)  
memory and 5 which operate on the Protect Register. The  
General Description  
The NM93CS06L/CS46L/CS56L/CS66L devices are  
256/1024/2048/4096 bits, respectively, of non-volatile  
ter instructions are PRREAD, PRWRITE, PRCLEAR,  
memory instructions are READ, WRITE, WRITE ALL,  
WRITE ENABLE, and WRITE DISABLE. The Protect regis-  
electrically erasable memory divided into 16/64/128/256 x  
16-bit registers (addresses). The NM93CSxxL Family func-  
PRDISABLE and PRENABLE.  
tions in an extended voltage operating range, and is fabri-  
cated using National Semiconductor’s floating gate CMOS  
Features  
Y
Sequential register read  
technology for high reliability, high endurance and low pow-  
s
Y
Write protection in a user defined section of memory  
s
s
s
er consumption. N registers (N 16, N 64, N 128, N  
Y
Y
2.7V to 5.5V operating range in all modes  
Typical active current of 200 mA; typical standby  
current of 1 mA  
256) can be protected against data modification by pro-  
gramming the Protect Register with the address of the first  
register to be protected against data modification. (All regis-  
ters greater than, or equal to, the selected address are then  
protected from further change.) Additionally, this address  
can be ‘‘locked’’ into the device, making all future attempts  
to change data impossible.  
Y
Y
Y
Y
Y
Y
Y
Y
No erase required before write  
Reliable CMOS floating gate technology  
MICROWIRE compatible serial I/O  
Self timed write cycle  
These devices are available in both SO and TSSOP pack-  
ages for small space considerations.  
Device status during programming mode  
40 year data retention  
6
Endurance: 10 data changes  
The serial interface that controls these EEPROMs is  
MICROWIRE compatible, providing simple interfacing to  
standard microcontrollers and microprocessors. There  
are a total of 10 instructions, 5 which operate on the EEPROM  
Packages Available: 8-pin SO, 8-pin DIP, and 8-pin  
TSSOP  
Block Diagram  
TL/D/10044–1  
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.  
MICROWIRETM is a trademark of National Semiconductor Corporation.  
C
1996 National Semiconductor Corporation  
TL/D/10044  
RRD-B30M126/Printed in U. S. A.  
http://www.national.com  

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