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NM93CS06L PDF预览

NM93CS06L

更新时间: 2024-09-15 10:25:35
品牌 Logo 应用领域
美国国家半导体 - NSC 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
14页 181K
描述
256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) and Data Protect (MICROWIRE-TM Bus Interface)

NM93CS06L 数据手册

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August 1996  
NM93CS06L/CS46L/CS56L/CS66L  
256-/1024-/2048-/4096-Bit Serial EEPROM  
with Extended Voltage (2.7V to 5.5V) and Data Protect  
(MICROWIRETM Bus Interface)  
memory and 5 which operate on the Protect Register. The  
General Description  
The NM93CS06L/CS46L/CS56L/CS66L devices are  
256/1024/2048/4096 bits, respectively, of non-volatile  
ter instructions are PRREAD, PRWRITE, PRCLEAR,  
memory instructions are READ, WRITE, WRITE ALL,  
WRITE ENABLE, and WRITE DISABLE. The Protect regis-  
electrically erasable memory divided into 16/64/128/256 x  
16-bit registers (addresses). The NM93CSxxL Family func-  
PRDISABLE and PRENABLE.  
tions in an extended voltage operating range, and is fabri-  
cated using National Semiconductor’s floating gate CMOS  
Features  
Y
Sequential register read  
technology for high reliability, high endurance and low pow-  
s
Y
Write protection in a user defined section of memory  
s
s
s
er consumption. N registers (N 16, N 64, N 128, N  
Y
Y
2.7V to 5.5V operating range in all modes  
Typical active current of 200 mA; typical standby  
current of 1 mA  
256) can be protected against data modification by pro-  
gramming the Protect Register with the address of the first  
register to be protected against data modification. (All regis-  
ters greater than, or equal to, the selected address are then  
protected from further change.) Additionally, this address  
can be ‘‘locked’’ into the device, making all future attempts  
to change data impossible.  
Y
Y
Y
Y
Y
Y
Y
Y
No erase required before write  
Reliable CMOS floating gate technology  
MICROWIRE compatible serial I/O  
Self timed write cycle  
These devices are available in both SO and TSSOP pack-  
ages for small space considerations.  
Device status during programming mode  
40 year data retention  
6
Endurance: 10 data changes  
The serial interface that controls these EEPROMs is  
MICROWIRE compatible, providing simple interfacing to  
standard microcontrollers and microprocessors. There  
are a total of 10 instructions, 5 which operate on the EEPROM  
Packages Available: 8-pin SO, 8-pin DIP, and 8-pin  
TSSOP  
Block Diagram  
TL/D/10044–1  
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.  
MICROWIRETM is a trademark of National Semiconductor Corporation.  
C
1996 National Semiconductor Corporation  
TL/D/10044  
RRD-B30M126/Printed in U. S. A.  
http://www.national.com  

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