Datasheet > 存储 > EEPROM> NM93CS06EN

NM93CS06EN

更新时间： 2024-11-04 22:44:47

品牌	Logo	应用领域
美国国家半导体 - NSC		内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数	文件大小	规格书
14页	204K
描述
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read

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NM93CS06EN 数据手册

August 1994

NM93CS06/CS46/CS56/CS66

(MICROWIRE^TMBus Interface) 256-/1024-/2048-/4096-Bit

Serial EEPROM with Data Protect and Sequential Read

General Description

The NM93CS06/CS46/CS56/CS66 devices are 256/

1024/2048/4096 bits, respectively, of CMOS non-volatile

electrically erasable memory divided into 16/64/128/

256 16-bit registers. Selected registers can be protected

against data modification by programming the Protect Reg-

ister with the address of the first register to be protected

against data modification (all registers greater than, or equal

to, the selected address are then protected from further

change). Additionally, this address can be ‘‘locked’’ into the

device, making all future attempts to change data impossi-

ble. These devices are fabricated using National Semicon-

ductor floating-gate CMOS process for high reliability, high

endurance and low power consumption. The NM93CSXX

Family is offered in an SO package for small space consid-

erations.

READ, WRITE, WRITE ALL, WRITE ENABLE, and WRITE

DISABLE. The Protect register instructions are PRREAD,

PRWRITE, PRENABLE, PRCLEAR, and PRDISABLE.

Features

Write protection in a user defined section of memory

Sequential register read

Typical active current of 400 mA and standby current of

25 mA

No erase required before write

Reliable CMOS floating gate technology

MICROWIRE compatible serial I/O

Self timed write cycle

Device status during programming mode

The EEPROM interfacing is MICROWIRE compatible pro-

viding simple interfacing to standard microcontrollers and

microprocessors. There are a total of 10 instructions, 5

which operate on the EEPROM memory, and 5 which oper-

ate on the Protect Register. The memory instructions are

40 year data retention

Endurance: 10 data changes

4.5V to 5.5V operation in all modes of operation

Packages available: 8-pin SO, 8-pin DIP

Block Diagram

TL/D/10750–1

TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.

MICROWIRE^TMis a trademark of National Semiconductor Corporation.

1995 National Semiconductor Corporation

TL/D/10750

RRD-B30M75/Printed in U. S. A.

12 3 4 5 6 7...14

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与NM93CS06EN相关器件

型号	品牌	获取价格	描述	数据表
NM93CS06L	NSC	获取价格	256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) and Data Prot
NM93CS06LEM	TI	获取价格	16X16 MICROWIRE BUS SERIAL EEPROM, PDSO14, SOIC-14
NM93CS06LEM8	NSC	获取价格	256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) and Data Prot
NM93CS06LEM8	FAIRCHILD	获取价格	256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchr
NM93CS06LEM8X	FAIRCHILD	获取价格	EEPROM, 16X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8
NM93CS06LEMT8	FAIRCHILD	获取价格	256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchr
NM93CS06LEMT8X	FAIRCHILD	获取价格	EEPROM, 16X16, Serial, CMOS, PDSO8, PLASTIC, TSSOP-8
NM93CS06LEN	FAIRCHILD	获取价格	256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchr
NM93CS06LEN	NSC	获取价格	256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) and Data Prot
NM93CS06LM	TI	获取价格	16X16 MICROWIRE BUS SERIAL EEPROM, PDSO14, SOIC-14

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