Datasheet > 存储 > EEPROM> NM93C06LZN

NM93C06LZN

更新时间： 2024-02-20 11:37:38

品牌	Logo	应用领域
美国国家半导体 - NSC		内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数	文件大小	规格书
12页	196K
描述
256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and Extended Voltage (2.7V to 5.5V)

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NM93C06LZN 数据手册

September 1996

NM93C06LZ/C46LZ/C56LZ/C66LZ

256-/1024-/2048-/4096-Bit Serial EEPROM with Zero

Power and Extended Voltage (2.7V to 5.5V)

(MICROWIRE^TMBus Interface)

General Description

Features

Less than 1.0 mA standby current

The NM93C06LZ/C46LZ/C56LZ/C66LZ devices are 256/

1024/2048/4096 bits respectively, of CMOS non-volatile

electrically erasable memory divided into 16/64/128/256

16-bit registers. They are fabricated using National Semi-

conductor’s floating-gate CMOS process for high reliability

and low power consumption. These memory devices are

available in both SO and TSSOP packages for small space

considerations.

2.7V–5.5V operation in all modes

Typical active current of 100 mA

Direct write: no erase before program

Reliable CMOS floating gate technology

MICROWIRE compatible serial I/O

Self-timed programming cycle

Device status indication during programming mode

The serial interface that operates these EEPROMs is MI-

CROWIRE compatible for simple interface to standard mi-

crocontrollers and microprocessors. There are 7 instruc-

tions that control these devices: Read, Erase/Write Enable,

Erase, Erase All, Write, Write All, and Erase/Write Disable.

The ready/busy status is available on the DO pin to indicate

the completion of a programming cycle.

40 years data retention

Endurance: 10 data changes

Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP

Block Diagram

TL/D/11778–1

TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.

MICROWIRE^TMis a trademark of National Semiconductor Corporation.

1996 National Semiconductor Corporation

TL/D/11778

RRD-B30M96/Printed in U. S. A.

http://www.national.com

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