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NM34W02LZEMT8X PDF预览

NM34W02LZEMT8X

更新时间： 2024-01-23 00:48:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 96K
描述
2K-Bit Standard 2-Wire Bus Interface Serial EEPROM with Full Array Write Protect

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中文翻译

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NM34W02LZEMT8X 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：TSSOP,针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.84
其他特性：16 BYTE PAGE WRITE; DATA RETENTION > 40 YEARS最大时钟频率 (fCLK)：0.1 MHz
数据保留时间-最小值：40JESD-30 代码：R-PDSO-G8
长度：4.4 mm内存密度：2048 bit
内存集成电路类型：EEPROM内存宽度：8
功能数量：1端子数量：8
字数：256 words字数代码：256
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256X8
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：SERIAL认证状态：Not Qualified
座面最大高度：1.2 mm串行总线类型：I2C
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.65 mm
端子位置：DUAL宽度：3 mm
最长写入周期时间 (tWC)：15 msBase Number Matches：1

NM34W02LZEMT8X 数据手册

 浏览型号NM34W02LZEMT8X的Datasheet PDF文件第2页浏览型号NM34W02LZEMT8X的Datasheet PDF文件第3页浏览型号NM34W02LZEMT8X的Datasheet PDF文件第4页浏览型号NM34W02LZEMT8X的Datasheet PDF文件第5页浏览型号NM34W02LZEMT8X的Datasheet PDF文件第6页浏览型号NM34W02LZEMT8X的Datasheet PDF文件第7页 
March 1999  
NM34W02  
2K-Bit Standard 2-Wire Bus Interface Serial EEPROM  
with Full Array Write Protect  
Designed with Permanent Write-Protection for First 128 Bytes for Serial Presence  
Detect Application on Memory Modules (PC100 Compliant)  
General Description  
Features  
The NM34W02 is 2048 bits of CMOS non-volatile electrically  
erasable memory. This device is specifically designed to support  
Serial Presence Detect circuitry in memory modules. This com-  
munications protocol uses CLOCK (SCL) and DATA I/O (SDA)  
lines to synchronously clock data between the master (for ex-  
ample a microprocessor) and the slave EEPROM device(s).  
■ PC100 Compliant  
■ Extended Operating Voltage: 2.7V-5.5V  
■ Software Write-Protection for first 128 bytes  
■ Hardware Write-Protection for entire memory array  
■ 200 µA active current typical  
The contents of the non-volatile memory allows the CPU to  
determine the capacity of the module and the electrical character-  
istics of the memory devices it contains. This will enable "plug and  
play" capability as the module is read and PC main memory  
resources utilized through the memory controller.  
– 1.0 µA standby current typical (L)  
– 0.1 µA standby current typical (LZ)  
■ IIC compatible interface  
– Provides bidirectional data transfer protocol  
■ Sixteen byte page write mode  
– Minimizes total write time per byte  
The first 128 bytes of the memory of the NM34W02 can be  
permanentlyWriteProtectedbywritingtothe"WRITEPROTECT"  
Register. Write Protect implementation details are described  
underthesectiontitledAddressingtheWPRegister. Inaddition,  
like the NM24Wxx product family, the entire memory array can be  
write-protected through "WP" pin.  
■ Self timed write cycle  
- Typical write cycle time of 6ms  
■ Endurance: 1,000,000 data changes  
■ Data retention greater than 40 years  
TheNM34W02isavailableinaJEDECstandardTSSOPpackage  
for low profile memory modules for systems requiring efficient  
space utilization such as in a notebook computer. Two options are  
available: L - Low Voltage and LZ - Low Power, allowing the part  
to be used in systems where battery life is of primary importance.  
■ Packages available: 8-pin TSSOP and 8-pin SO  
■ Temperature Ranges: Commercial and Extended  
Block Diagram  
V
CC  
V
SS  
WP  
H.V. GENERATION  
TIMING &CONTROL  
START CYCLE  
START  
STOP  
SDA  
LOGIC  
CONTROL  
LOGIC  
SLAVE ADDRESS  
REGISTER &  
COMPARATOR  
2
E
PROM  
16  
ARRAY  
16 x 16 x 8  
XDEC  
SCL  
LOAD  
INC  
A2  
A1  
A0  
WORD  
ADDRESS  
COUNTER  
0/1/2/3  
4
16  
4
R/W  
YDEC  
Device Address Bits  
8
Write Protect  
Register  
CK  
D
OUT  
DATA REGISTER  
D
IN  
DS500078-1  
1
© 1999 Fairchild Semiconductor Corporation  
NM34W02 Rev. C.2  
www.fairchildsemi.com  
1234567...12

中文翻译

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