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NM24C09VMT8 PDF预览

NM24C09VMT8

更新时间: 2024-11-12 23:53:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
14页 106K
描述
I2C Serial EEPROM

NM24C09VMT8 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:TSSOP, TSSOP8,.25针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.82
Is Samacsys:N其他特性:16 BYTE PAGE WRITE MODE; DATA RETENTION > 40 YEARS
最大时钟频率 (fCLK):0.1 MHz数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DMMR
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.4 mm内存密度:8192 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:1024 words字数代码:1000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:1KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:I2C最大待机电流:0.00005 A
子类别:EEPROMs最大压摆率:0.001 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE
Base Number Matches:1

NM24C09VMT8 数据手册

 浏览型号NM24C09VMT8的Datasheet PDF文件第2页浏览型号NM24C09VMT8的Datasheet PDF文件第3页浏览型号NM24C09VMT8的Datasheet PDF文件第4页浏览型号NM24C09VMT8的Datasheet PDF文件第5页浏览型号NM24C09VMT8的Datasheet PDF文件第6页浏览型号NM24C09VMT8的Datasheet PDF文件第7页 
February 2000  
NM24C08/09 – 8K-Bit Standard 2-Wire Bus  
Interface Serial EEPROM  
General Description  
Features  
The NM24C08/09 devices are 8192 bits of CMOS non-volatile  
electrically erasable memory. These devices conform to all speci-  
fications in the Standard IIC 2-wire protocol and are designed to  
minimize device pin count, and simplify PC board layout require-  
ments.  
I Extended operating voltage 2.7V – 5.5V  
I 400 KHz clock frequency (F) at 2.7V - 5.5V  
I 200µA active current typical  
10µA standby current typical  
1µA standby current typical (L)  
0.1µA standby current typical (LZ)  
Theupperhalf(upper4Kbit)ofthememoryoftheNM24C09canbe  
write protected by connecting the WP pin to VCC. This section of  
I IIC compatible interface  
memory then becomes unalterable unless WP is switched to VSS  
.
– Provides bi-directional data transfer protocol  
This communications protocol uses CLOCK (SCL) and DATA  
I/O (SDA) lines to synchronously clock data between the master  
(forexampleamicroprocessor)andtheslaveEEPROMdevice(s).  
The Standard IIC protocol allows for a maximum of 16K of  
EEPROM memory which is supported by the Fairchild family in  
2K, 4K, 8K, and 16K devices, allowing the user to configure the  
memory as the application requires with any combination of  
EEPROMs. In order to implement higher EEPROM memory  
densities on the IIC bus, the Extended IIC protocol must be used.  
(Refer to the NM24C32 or NM24C65 datasheets for more infor-  
mation.)  
I Schmitt trigger inputs  
I Sixteen byte page write mode  
– Minimizes total write time per byte  
I Self timed write cycle  
Typical write cycle time of 6ms  
I Hardware Write Protect for upper half (NM24C09 only)  
I Endurance: 1,000,000 data changes  
I Data retention greater than 40 years  
I Packages available: 8-pin DIP, 8-pin SO, and 8-pin TSSOP  
I Available in three temperature ranges  
- Commercial: 0° to +70°C  
Fairchild EEPROMs are designed and tested for applications requir-  
ing high endurance, high reliability and low power consumption.  
- Extended (E): -40° to +85C  
- Automotive (V): -40° to +125°C  
Block Diagram  
V
CC  
V
SS  
WP  
H.V. GENERATION  
TIMING &CONTROL  
START  
STOP  
SDA  
LOGIC  
CONTROL  
LOGIC  
SLAVE ADDRESS  
REGISTER &  
2
E
PROM  
COMPARATOR  
XDEC  
ARRAY  
SCL  
A2  
WORD  
ADDRESS  
COUNTER  
R/W  
YDEC  
CK  
D
OUT  
DATA REGISTER  
D
IN  
DS500071-1  
1
© 1998 Fairchild Semiconductor Corporation  
NM24C08/09 Rev. G  
www.fairchildsemi.com  

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