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NLV14082BDR2G

更新时间： 2024-11-24 11:01:43
品牌 Logo 应用领域
安森美 - ONSEMI 栅栅极
页数 文件大小 规格书
14页 171K
描述
双路 4 输入 AND 门极

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NLV14082BDR2G 数据手册

 浏览型号NLV14082BDR2G的Datasheet PDF文件第2页浏览型号NLV14082BDR2G的Datasheet PDF文件第3页浏览型号NLV14082BDR2G的Datasheet PDF文件第4页浏览型号NLV14082BDR2G的Datasheet PDF文件第5页浏览型号NLV14082BDR2G的Datasheet PDF文件第6页浏览型号NLV14082BDR2G的Datasheet PDF文件第7页 
MC14001B Series  
B-Suffix Series CMOS Gates  
MC14001B, MC14011B, MC14023B,  
MC14025B, MC14071B, MC14073B,  
MC14081B, MC14082B  
http://onsemi.com  
The B Series logic gates are constructed with P and N channel  
enhancement mode devices in a single monolithic structure  
(Complementary MOS). Their primary use is where low power  
dissipation and/or high noise immunity is desired.  
MARKING  
DIAGRAMS  
14  
1
PDIP−14  
P SUFFIX  
CASE 646  
Features  
MC140xxBCP  
AWLYYWWG  
• Supply Voltage Range = 3.0 Vdc to 18 Vdc  
• All Outputs Buffered  
• Capable of Driving Two Low−power TTL Loads or One Low−power  
Schottky TTL Load Over the Rated Temperature Range.  
• Double Diode Protection on All Inputs Except: Triple Diode  
Protection on MC14011B and MC14081B  
• Pin−for−Pin Replacements for Corresponding CD4000 Series  
B Suffix Devices  
• Pb−Free Packages are Available  
14  
SOIC−14  
D SUFFIX  
CASE 751A  
140xxBG  
AWLYWW  
1
14  
14  
0xxB  
ALYWG  
G
TSSOP−14  
DT SUFFIX  
CASE 948G  
1
MAXIMUM RATINGS (Voltages Referenced to V  
)
SS  
14  
Symbol  
Parameter  
Value  
−0.5 to +18.0  
Unit  
V
SOEIAJ−14  
F SUFFIX  
CASE 965  
MC140xxB  
ALYWG  
V
DD  
DC Supply Voltage Range  
V , V  
in out  
Input or Output Voltage Range  
(DC or Transient)  
−0.5 to V + 0.5  
V
DD  
1
I , I  
Input or Output Current  
(DC or Transient) per Pin  
10  
mA  
xx  
A
WL, L  
YY, Y  
= Specific Device Code  
= Assembly Location  
= Wafer Lot  
in out  
P
D
Power Dissipation, per Package  
(Note 1)  
500  
mW  
= Year  
WW, W = Work Week  
T
A
Ambient Temperature Range  
Storage Temperature Range  
−55 to +125  
−65 to +150  
260  
°C  
°C  
°C  
G or G  
= Pb−Free Package  
(Note: Microdot may be in either location)  
T
stg  
T
Lead Temperature  
(8−Second Soldering)  
L
DEVICE INFORMATION  
Device  
MC14001B  
MC14011B  
Description  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Temperature Derating:  
Quad 2−Input NOR Gate  
Quad 2−Input NAND Gate  
MC14023B  
MC14025B  
MC14071B  
MC14073B  
Triple 3−Input NAND Gate  
Triple 3−Input NOR Gate  
Quad 2−Input OR Gate  
Triple 3−Input AND Gate  
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C  
This device contains protection circuitry to guard against damage due to high  
static voltages or electric fields. However, precautions must be taken to avoid  
applications of any voltage higher than maximum rated voltages to this  
high−impedance circuit. For proper operation, V and V should be constrained  
in  
out  
to the range V v (V or V ) v V  
.
SS  
in  
out  
DD  
MC14081B  
MC14082B  
Quad 2−Input AND Gate  
Dual 4−Input AND Gate  
Unused inputs must always be tied to an appropriate logic voltage level  
(e.g., either V or V ). Unused outputs must be left open.  
SS  
DD  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 − Rev. 6  
MC14001B/D  
 
1234567...14

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