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NLV14069UBDTR2G PDF预览

NLV14069UBDTR2G

更新时间: 2024-11-27 01:11:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 115K
描述
Hex Inverter

NLV14069UBDTR2G 数据手册

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MC14069UB  
Hex Inverter  
The MC14069UB hex inverter is constructed with MOS P−channel  
and N−channel enhancement mode devices in a single monolithic  
structure. These inverters find primary use where low power  
dissipation and/or high noise immunity is desired. Each of the six  
inverters is a single stage to minimize propagation delays.  
http://onsemi.com  
Features  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
Capable of Driving Two Low−Power TTL Loads or One  
Low−Power Schottky TTL Load Over the Rated Temperature  
Range  
SOIC−14  
D SUFFIX  
CASE 751A  
SOEIAJ−14  
F SUFFIX  
CASE 965  
TSSOP−14  
DT SUFFIX  
CASE 948G  
Triple Diode Protection on All Inputs  
Pin−for−Pin Replacement for CD4069UB  
Meets JEDEC UB Specifications  
PIN ASSIGNMENT  
NLV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable  
1
2
3
4
5
6
7
IN 1  
14  
13  
V
DD  
IN 6  
OUT 1  
IN 2  
12 OUT 6  
These Devices are Pb−Free and are RoHS Compliant  
11  
10  
9
IN 5  
OUT 2  
IN 3  
MAXIMUM RATINGS (Voltages Referenced to V  
)
OUT 5  
IN 4  
SS  
OUT 3  
Symbol  
Parameter  
Value  
0.5 to +18.0  
Unit  
V
V
SS  
8
OUT 4  
V
DD  
DC Supply Voltage Range  
V , V  
in out  
Input or Output Voltage Range  
(DC or Transient)  
0.5 to V + 0.5  
V
DD  
MARKING DIAGRAMS  
I , I  
Input or Output Current  
(DC or Transient) per Pin  
10  
mA  
in out  
14  
14  
1
P
D
Power Dissipation, per Package  
(Note 1)  
500  
mW  
14069UG  
AWLYWW  
MC14069UB  
ALYWG  
T
A
Ambient Temperature Range  
Storage Temperature Range  
55 to +125  
65 to +150  
260  
°C  
°C  
°C  
1
T
stg  
SOIC−14  
SOEIAJ−14  
T
L
Lead Temperature  
(8−Second Soldering)  
14  
1
14  
069U  
ALYWG  
G
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C  
This device contains protection circuitry to guard against damage due to high  
static voltages or electric fields. However, precautions must be taken to avoid  
applications of any voltage higher than maximum rated voltages to this  
TSSOP−14  
A
WL, L  
YY, Y  
= Assembly Location  
= Wafer Lot  
= Year  
high−impedance circuit. For proper operation, V and V should be constrained  
in  
out  
to the range V (V or V ) V .  
SS  
in  
out  
DD  
Unused inputs must always be tied to an appropriate logic voltage level  
(e.g., either V or V ). Unused outputs must be left open.  
WW, W = Work Week  
SS  
DD  
G or G  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
August, 2014 − Rev. 11  
MC14069UB/D  
 

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