5秒后页面跳转
NLV14007UBDR2G PDF预览

NLV14007UBDR2G

更新时间: 2024-11-06 11:01:43
品牌 Logo 应用领域
安森美 - ONSEMI 栅极
页数 文件大小 规格书
9页 155K
描述
双互补对加逆变器

NLV14007UBDR2G 数据手册

 浏览型号NLV14007UBDR2G的Datasheet PDF文件第2页浏览型号NLV14007UBDR2G的Datasheet PDF文件第3页浏览型号NLV14007UBDR2G的Datasheet PDF文件第4页浏览型号NLV14007UBDR2G的Datasheet PDF文件第5页浏览型号NLV14007UBDR2G的Datasheet PDF文件第6页浏览型号NLV14007UBDR2G的Datasheet PDF文件第7页 
MC14007UB  
Dual Complementary Pair  
Plus Inverter  
The MC14007UB multipurpose device consists of three NChannel  
and three PChannel enhancement mode devices packaged to provide  
access to each device. These versatile parts are useful in inverter  
circuits, pulseshapers, linear amplifiers, high input impedance  
amplifiers, threshold detectors, transmission gating, and functional  
gating.  
http://onsemi.com  
MARKING  
DIAGRAMS  
14  
Features  
PDIP14  
P SUFFIX  
CASE 646  
Diode Protection on All Inputs  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
Capable of Driving Two Lowpower TTL Loads or One Lowpower  
Schottky TTL Load Over the Rated Temperature Range  
PinforPin Replacement for CD4007A or CD4007UB  
This device has 2 outputs without ESD Protection. Antistatic  
precautions must be taken.  
MC14007UBCP  
AWLYYWWG  
1
14  
SOIC14  
D SUFFIX  
CASE 751A  
14007UG  
AWLYWW  
PbFree Packages are Available  
1
14  
MAXIMUM RATINGS (Voltages Referenced to V  
)
SS  
SOEIAJ14  
F SUFFIX  
CASE 965  
MC14007UB  
ALYWG  
Symbol  
Parameter  
Value  
0.5 to +18.0  
Unit  
V
V
DC Supply Voltage Range  
DD  
1
V , V  
in out  
Input or Output Voltage Range  
(DC or Transient)  
0.5 to V +0.5  
V
DD  
A
WL, L  
YY, Y  
= Assembly Location  
= Wafer Lot  
= Year  
I , I  
Input or Output Current  
(DC or Transient) per Pin  
±10  
mA  
in out  
P
Power Dissipation, per Package  
(Note 1)  
500  
mW  
D
WW, W = Work Week  
= PbFree Indicator  
G
T
Ambient Temperature Range  
Storage Temperature Range  
55 to +125  
65 to +150  
260  
°C  
°C  
°C  
A
T
stg  
PIN ASSIGNMENT  
T
Lead Temperature  
(8 second Soldering)  
L
DP  
SP  
1
2
3
4
5
6
7
14  
V
DD  
B
B
B
B
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Temperature Derating:  
13 DP  
A
GATE  
SN  
12 OUT  
C
11 SP  
C
Plastic “P and D/DW” Packages: – 7.0 mW/°C from 65°C 5o 125°C.  
DN  
10 GATE  
C
B
GATE  
9
8
SN  
C
A
V
DN  
A
SS  
D = DRAIN  
S = SOURCE  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 Rev. 8  
MC14007UB/D  
 

与NLV14007UBDR2G相关器件

型号 品牌 获取价格 描述 数据表
NLV14011BDG ONSEMI

获取价格

B-Suffix Series CMOS Gates
NLV14011BDR2G ONSEMI

获取价格

B-Suffix Series CMOS Gates
NLV14011BDTR2G ONSEMI

获取价格

B-Suffix Series CMOS Gates
NLV14011UBDG ONSEMI

获取价格

UB-Suffix Series CMOS Gates
NLV14011UBDR2G ONSEMI

获取价格

UB-Suffix Series CMOS Gates
NLV14012BDG ONSEMI

获取价格

Dual 4-Input NAND Gates
NLV14012BDR2G ONSEMI

获取价格

Dual 4-Input NAND Gates
NLV14013BCPG ONSEMI

获取价格

Dual Type D Flip-Flop
NLV14013BDG ONSEMI

获取价格

Dual Type D Flip-Flop
NLV14013BDR2G ONSEMI

获取价格

Dual Type D Flip-Flop