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NLB-300-E PDF预览

NLB-300-E

更新时间: 2024-11-04 22:28:59
品牌 Logo 应用领域
威讯 - RFMD 放大器
页数 文件大小 规格书
8页 206K
描述
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz

NLB-300-E 数据手册

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NLB-300  
CASCADABLE BROADBAND  
GaAs MMIC AMPLIFIER DC TO 10GHz  
0
Typical Applications  
• Narrow and Broadband Commercial and  
Military Radio Designs  
• Gain Stage or Driver Amplifiers for  
MWRadio/Optical Designs (PTP/PMP/  
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)  
• Linear and Saturated Amplifiers  
Product Description  
The NLB-300 cascadable broadband InGaP/GaAs MMIC  
amplifier is a low-cost, high-performance solution for gen-  
eral purpose RF and microwave amplification needs. This  
50gain block is based on a reliable HBT proprietary  
MMIC design, providing unsurpassed performance for  
small-signal applications. Designed with an external bias  
resistor, the NLB-300 provides flexibility and stability. The  
NLB-300 is packaged in a low-cost, surface-mount plastic  
package, providing ease of assembly for high-volume  
tape-and-reel requirements.  
B
MILLIMETERS  
Min. Nom. Max. Min. Nom. Max.  
0.535 REF. 0.021 REF.  
INCHES  
D
A
B
C
D
E
F
2.39 2.54 2.69 0.094 0.100 0.106  
0.436 0.510 0.586 0.017 0.020 0.023  
2.19 2.34 2.49 0.086 0.092 0.098  
1.91 2.16 2.41 0.075 0.085 0.095  
1.32 1.52 1.72 0.052 0.060 0.068  
0.10 0.15 0.20 0.004 0.006 0.008  
0.535 0.660 0.785 0.021 0.026 0.031  
0.05 0.10 0.15 0.002 0.004 0.006  
0.65 0.75 0.85 0.025 0.029 0.033  
0.85 0.95 1.05 0.033 0.037 0.041  
4 M  
A
G
H
J
C
N 5  
1
2
3
K
L
4 M 4.53 4.68 4.83 0.178 0.184 0.190  
5 N 4.73 4.88 5.03 0.186 0.192 0.198  
E
NOTE: All dimensions are in millimeters, and  
the dimensions in inches are for reference only.  
6
H
0.08 S  
F
Gauge Plane  
Seating Plane  
1 J  
S
G
0.1  
2
L 3  
Kx3  
Optimum Technology Matching® Applied  
Package Style: Micro-X, 4-Pin, Plastic  
Si BJT  
GaAs HBT  
SiGe HBT  
GaN HEMT  
GaAs MESFET  
Si Bi-CMOS  
InGaP/HBT  
Si CMOS  
Features  
SiGe Bi-CMOS  
9
• Reliable, Low-Cost HBT Design  
• 13.0dB Gain, +11.1dBm P1dB@2GHz  
• High P1dB of +14.1dBm@6.0GHz and  
+12.7dBm@10.0GHz  
GND  
4
MARKING - N3  
• Single Power Supply Operation  
• 50I/O Matched for High Freq. Use  
RF IN  
1
3 RF OUT  
Ordering Information  
2
GND  
NLB-300  
Cascadable Broadband GaAs MMIC Amplifier DC to  
10GHz  
NLB-300-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)  
NLB-300-E  
NBB-X-K1  
Fully Assembled Evaluation Board  
Extended Frequency InGaP Amp Designer’s Tool Kit  
RF Micro Devices, Inc.  
7628 Thorndike Road  
Tel (336) 664 1233  
Fax (336) 664 0454  
http://www.rfmd.com  
Greensboro, NC 27409, USA  
Functional Block Diagram  
Rev A7 040409  
4-131  

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