Datasheet > NLB-300-E

NLB-300-E

更新时间： 2024-11-23 22:28:59

品牌	Logo	应用领域
威讯 - RFMD		放大器
页数	文件大小	规格书
8页	206K
描述
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NLB-300-E 数据手册

NLB-300

CASCADABLE BROADBAND

GaAs MMIC AMPLIFIER DC TO 10GHz

Typical Applications

• Narrow and Broadband Commercial and

Military Radio Designs

• Gain Stage or Driver Amplifiers for

MWRadio/Optical Designs (PTP/PMP/

LMDS/UNII/VSAT/WLAN/Cellular/DWDM)

• Linear and Saturated Amplifiers

Product Description

The NLB-300 cascadable broadband InGaP/GaAs MMIC

amplifier is a low-cost, high-performance solution for gen-

eral purpose RF and microwave amplification needs. This

50Ω gain block is based on a reliable HBT proprietary

MMIC design, providing unsurpassed performance for

small-signal applications. Designed with an external bias

resistor, the NLB-300 provides flexibility and stability. The

NLB-300 is packaged in a low-cost, surface-mount plastic

package, providing ease of assembly for high-volume

tape-and-reel requirements.

MILLIMETERS

Min. Nom. Max. Min. Nom. Max.

0.535 REF. 0.021 REF.

INCHES

2.39 2.54 2.69 0.094 0.100 0.106

0.436 0.510 0.586 0.017 0.020 0.023

2.19 2.34 2.49 0.086 0.092 0.098

1.91 2.16 2.41 0.075 0.085 0.095

1.32 1.52 1.72 0.052 0.060 0.068

0.10 0.15 0.20 0.004 0.006 0.008

0.535 0.660 0.785 0.021 0.026 0.031

0.05 0.10 0.15 0.002 0.004 0.006

0.65 0.75 0.85 0.025 0.029 0.033

0.85 0.95 1.05 0.033 0.037 0.041

4 M

N 5

4 M 4.53 4.68 4.83 0.178 0.184 0.190

5 N 4.73 4.88 5.03 0.186 0.192 0.198

NOTE: All dimensions are in millimeters, and

the dimensions in inches are for reference only.

0.08 S

Gauge Plane

Seating Plane

1 J

0.1

L 3

Kx3

Optimum Technology Matching® Applied

Package Style: Micro-X, 4-Pin, Plastic

Si BJT

GaAs HBT

SiGe HBT

GaN HEMT

GaAs MESFET

Si Bi-CMOS

InGaP/HBT

Si CMOS

Features

SiGe Bi-CMOS

• Reliable, Low-Cost HBT Design

• 13.0dB Gain, +11.1dBm P1dB@2GHz

• High P1dB of +14.1dBm@6.0GHz and

+12.7dBm@10.0GHz

GND

MARKING - N3

• Single Power Supply Operation

• 50Ω I/O Matched for High Freq. Use

RF IN

3 RF OUT

Ordering Information

GND

NLB-300

Cascadable Broadband GaAs MMIC Amplifier DC to

10GHz

NLB-300-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)

NLB-300-E

NBB-X-K1

Fully Assembled Evaluation Board

Extended Frequency InGaP Amp Designer’s Tool Kit

RF Micro Devices, Inc.

7628 Thorndike Road

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Greensboro, NC 27409, USA

Functional Block Diagram

Rev A7 040409

4-131

12 3 4 5 6 7 8

中文翻译

下载PDF

与NLB-300-E相关器件

型号	品牌	获取价格	描述	数据表
NLB-300-T1	RFMD	获取价格	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
NLB-300-T3	RFMD	获取价格	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
NLB-310	RFMD	获取价格	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
NLB-310-	RFMD	获取价格	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
NLB-310_06	RFMD	获取价格	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
NLB-310_1	RFMD	获取价格	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
NLB-310-E	RFMD	获取价格	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
NLB-310-T1	RFMD	获取价格	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
NLB-310-T3T	RFMD	获取价格	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz
NLB-400	RFMD	获取价格	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz

与NLB-300-E相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

NLB-300-E

NLB-300-E 数据手册

与NLB-300-E相关器件

与NLB-300-E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NLB-300-E

NLB-300-E 数据手册

与NLB-300-E相关器件

与NLB-300-E相关文章

您还可以找

您在本页遇到什么问题？