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NLASB3157MTR2G PDF预览

NLASB3157MTR2G

更新时间: 2024-11-20 03:46:23
品牌 Logo 应用领域
安森美 - ONSEMI 复用器开关复用器或开关信号电路光电二极管输出元件PC
页数 文件大小 规格书
10页 98K
描述
SPDT, 3 ohm RON Switch

NLASB3157MTR2G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:DFN包装说明:VSSOP, SOLCC6,.04,16
针数:6Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:1.49
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:2399286Samacsys Pin Count:6
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline No-lead
Samacsys Footprint Name:WDFN 6Samacsys Released Date:2019-08-15 03:35:30
Is Samacsys:N模拟集成电路 - 其他类型:SPDT
JESD-30 代码:R-PDSO-G6JESD-609代码:e4
长度:1.2 mm湿度敏感等级:1
信道数量:2功能数量:1
端子数量:6标称断态隔离度:57 dB
通态电阻匹配规范:0.5 Ω最大通态电阻 (Ron):15 Ω
最高工作温度:125 °C最低工作温度:-55 °C
输出:SEPARATE OUTPUT封装主体材料:PLASTIC/EPOXY
封装代码:VSSOP封装等效代码:SOLCC6,.04,16
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:1.8/5 V
认证状态:Not Qualified座面最大高度:0.8 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):2.3 V
表面贴装:YES最长断开时间:13 ns
最长接通时间:24 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:MILITARY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.4 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:1 mm
Base Number Matches:1

NLASB3157MTR2G 数据手册

 浏览型号NLASB3157MTR2G的Datasheet PDF文件第2页浏览型号NLASB3157MTR2G的Datasheet PDF文件第3页浏览型号NLASB3157MTR2G的Datasheet PDF文件第4页浏览型号NLASB3157MTR2G的Datasheet PDF文件第5页浏览型号NLASB3157MTR2G的Datasheet PDF文件第6页浏览型号NLASB3157MTR2G的Datasheet PDF文件第7页 
NLASB3157  
SPDT, 3 W RON Switch  
The NLASB3157 is an advanced CMOS analog switch fabricated  
with silicon gate CMOS technology. It achieves very low  
propagation delay and RDS resistances while maintaining CMOS  
ON  
low power dissipation. Analog and digital voltages that may vary  
across the full power−supply range (from V to GND). This device  
is a drop in replacement for the NC7SB3157.  
The select pin has overvoltage protection that allows voltages  
CC  
http://onsemi.com  
MARKING  
above V  
up to 7.0 V to be present on the pin without damage or  
CC,  
DIAGRAMS  
disruption of operation of the part, regardless of the operating  
voltage.  
SC−88  
AF MG  
6
DF SUFFIX  
CASE 419B  
Features  
G
1
High Speed: t = 1.0 ns (Typ) at V = 5.0 V  
PD  
CC  
Low Power Dissipation: I = 2.0 mA (Max) at T = 25°C  
CC  
A
WDFN6  
MT SUFFIX  
CASE 506AS  
F M  
G
Standard CMOS Logic Levels  
High Bandwidth, Improved Linearity  
Switches Standard NTSC/PAL Video, Audio, SPDIF and HDTV  
May be used for Clock Switching, Data Multiplexing, etc.  
R Typical = 3 W @ V = 4.5 V  
AF, F  
M
= Specific Device Code  
= Date Code*  
= Pb−Free Package  
G
ON  
CC  
(Note: Microdot may be in either location)  
Break Before Make Circuitry, Prevents Inadvertent Shorts  
*Date Code orientation may vary depending  
upon manufacturing location.  
2 Devices can Switch Balanced Signal Pairs,  
e.g. LVDS u 200−Mb/s  
FUNCTION TABLE  
Latchup Performance Exceeds 300 mA  
Select Input  
Function  
Pin for Pin Drop in for NC7SB3157  
Tiny SC88 and WDFN6 Packages  
L
H
B0 Connected to A  
B1 Connected to A  
ESD Performance:  
Human Body Model; u 2000 V;  
Machine Model; u 200 V  
ORDERING INFORMATION  
Extended Automotive Temperature Range −55°C to +125°C  
(See Appendix)  
Device  
NLASB3157DFT2  
Package  
Shipping  
Pb−Free Packages are Available  
SC−88  
3000 Tape & Reel  
3000 Tape & Reel  
NLASB3157DFT2G SC−88  
(Pb−Free)  
NLASB3157MTR2G WDFN6 3000 Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
November, 2006 − Rev. 9  
NLASB3157/D  

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