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NLAS44599MNG PDF预览

NLAS44599MNG

更新时间： 2024-11-19 03:15:11
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管
页数 文件大小 规格书
12页 168K
描述
Low Voltage Single Supply Dual DPDT Analog Switch

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NLAS44599MNG 数据手册

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NLAS44599  
Low Voltage Single Supply  
Dual DPDT Analog Switch  
The NLAS44599 is an advanced dual−independent CMOS double  
pole−double throw (DPDT) analog switch fabricated with silicon  
gate CMOS technology. It achieves high speed propagation delays  
and low ON resistances while maintaining CMOS low power  
dissipation. This DPDT controls analog and digital voltages that may  
http://onsemi.com  
MARKING  
vary across the full power−supply range (from V to GND).  
CC  
The device has been designed so the ON resistance (R ) is much  
DIAGRAMS  
ON  
lower and more linear over input voltage than R of typical CMOS  
analog switches.  
ON  
16  
16  
1
1
AS  
4459  
ALYW  
The channel select input is compatible with standard CMOS outputs.  
The channel select input structure provides protection when  
voltages between 0 V and 5.5 V are applied, regardless of the supply  
voltage. This input structure helps prevent device destruction caused  
by supply voltage − input/output voltage mismatch, battery backup,  
hot insertion, etc.  
C
ALYW  
QFN−16  
MN SUFFIX  
CASE 485G  
Current  
Previous  
Part Marking*  
Part Marking  
The NLAS44599 can also be used as a quad 2−to−1 multiplexer−  
demultiplexer analog switch with two Select pins that each controls  
two multiplexer−demultiplexers.  
*Previous releases of this device may be marked as  
shown in this diagram.  
• Channel Select Input Over−Voltage Tolerant to 5.5 V  
• Fast Switching and Propagation Speeds  
• Break−Before−Make Circuitry  
16  
NLAS  
4459  
ALYW  
16  
1
• Low Power Dissipation: I = 2 ꢀ A (Max) at T = 25°C  
1
CC  
A
• Diode Protection Provided on Channel Select Input  
• Improved Linearity and Lower ON Resistance over Input Voltage  
• Latch−up Performance Exceeds 300 mA  
TSSOP−16  
DT SUFFIX  
CASE 948F  
• ESD Performance: Human Body Model; > 2000 V,  
Machine Model; > 200 V  
A
L
Y
= Assembly Location  
= Wafer Lot  
= Year  
• Chip Complexity: 158 FETs  
• Pb−Free Packages are Available  
W
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
April, 2005 − Rev. 13  
NLAS44599/D  
1234567...12

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NLAS44599MNG 替代型号

型号 品牌 替代类型 描述 数据表
NLAS44599MN ONSEMI

完全替代

 Low Voltage Single Supply Dual DPDT Analog Switch

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