是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | not_compliant |
风险等级: | 5.85 | 最大集电极电流 (IC): | 4 A |
配置: | Single | 最小直流电流增益 (hFE): | 750 |
JESD-609代码: | e0 | 最高工作温度: | 200 °C |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 50 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 标称过渡频率 (fT): | 4 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6294LEADFREE | CENTRAL | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 |
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2N6294PBFREE | CENTRAL | Power Bipolar Transistor, |
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2N6294TIN/LEAD | CENTRAL | Power Bipolar Transistor, 4A I(C), NPN, |
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2N6295 | NJSEMI | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
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2N6295 | CENTRAL | COMPLEMENTARY SILICON DARLINGTONl |
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2N6295 | SEME-LAB | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR |
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