生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
最大集电极电流 (IC): | 30 A | 配置: | Single |
最小直流电流增益 (hFE): | 10 | 最高工作温度: | 175 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 200 W |
子类别: | Other Transistors | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N2778 | NJSEMI | 20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A |
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2N2779 | MICROSEMI | Power Bipolar Transistor, 30A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, |
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2N2779 | NJSEMI | 20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A |
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2N2779E3 | MICROSEMI | Power Bipolar Transistor, 30A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, |
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2N278 | NJSEMI | POWER TRANSISTOR |
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2N2780 | MICROSEMI | Power Bipolar Transistor, 30A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, |
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