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NJL8130R PDF预览

NJL8130R

更新时间: 2024-02-11 04:13:09
品牌 Logo 应用领域
NJRC 放大器输出元件光电
页数 文件大小 规格书
3页 73K
描述
Linear Output Photo IC

NJL8130R 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.92
应用:AMPLIFIER配置:COMPLEX
红外线范围:YESJESD-609代码:e0
安装特点:SURFACE MOUNT功能数量:1
最高工作温度:85 °C最低工作温度:-30 °C
光电设备类型:LINEAR OUTPUT PHOTO IC形状:RECTANGULAR
子类别:Photo ICs最大压摆率:0.008 mA
最小供电电压:4.5 V标称供电电压:5 V
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

NJL8130R 数据手册

 浏览型号NJL8130R的Datasheet PDF文件第2页浏览型号NJL8130R的Datasheet PDF文件第3页 
NJL8130R rev3.0  
TENTATIVE  
Photo IC for LASER power monitor  
GENERAL DESCRIPTION  
NJL8130R is Photo IC for Laser power monitor of CD-R/RW and Combination drive.  
NJL8130R consists of high speed PIN photo diode and high-speed I-V amplifier. NJL8130R is adopted compact and  
thin COB package, which build-in the bypass capacitor. NJL8130R is well suited for slim drive.  
FEATURE  
High speed response  
Gain adjustment by external VR  
Built-in the bypass capacitor  
Miniature, thin type (4.0mmX3.0mmX1.1mm)  
Reflow type  
APPLICATION  
LASER power monitor for CD-R/RW and Combination drive etc  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
CONDITION  
UNIT  
Vcc  
Vc  
Vopr  
Vstg  
10  
Operating voltage  
Reference voltage  
Operating temperature  
Storage temperature  
V
V
°C  
°C  
2.0 to 3.2  
-30 to +85  
-40 to +100  
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C,Vcc=5V,Vc=2.5V,RL=10K,CL=10pF,VR=200Ω,λ=780nm)  
PARAMETER  
Operating voltage  
Current consumption  
Output off-set voltage  
Sensitivity  
SYMBOL  
CONDITION  
MIN  
TYP  
MAX  
UNIT  
Vcc  
Icc  
Voff  
Gvout  
-
4.5  
3.0  
-10  
-2.2  
-1.6  
-
5.0  
5.0  
0
-2.9  
-2.1  
7.0  
7.5  
1.0  
5.5  
8.0  
+10  
-3.6  
-2.7  
-
V
mA  
mV  
mV/uW  
mV/uW  
ns  
In the dark  
In the dark  
λ=780nm,Po=10uW  
λ=650nm,Po=10uW  
Vout=1.5V  
Vout=1.5V  
Tr  
Tf  
Vom  
Response time  
-
-
-
ns  
V
GND reference  
Output maximum voltage  
1.2  
Note 1) Output off-set voltage : Vc is the reference.  
Note 2) Response time : Confirmation of design.  
Note 3) Measurement by optical input : Measurement is made by emitting the light to all over the package.  
Photo diode sensitivity: 0.47 A/W (λ=780nm)  
- 1 -  

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