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NIF62514T1G PDF预览

NIF62514T1G

更新时间： 2024-09-24 03:46:31
品牌 Logo 应用领域
安森美 - ONSEMI 外围驱动器驱动程序和接口接口集成电路光电二极管PC
页数 文件大小 规格书
6页 76K
描述
Self−protected FET with Temperature and Current Limit

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中文翻译

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NIF62514T1G 技术参数

是否无铅： 不含铅生命周期：Contact Manufacturer
零件包装代码：TO-261AA包装说明：SOP,
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.1
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：1797339Samacsys Pin Count：4
Samacsys Part Category：TransistorSamacsys Package Category：SOT223 (3-Pin)
Samacsys Footprint Name：NIF62514T1G+Samacsys Released Date：2020-05-16 14:51:29
Is Samacsys：N内置保护：OVER CURRENT; THERMAL; TRANSIENT
接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码：R-PDSO-G4
JESD-609代码：e3长度：6.5 mm
功能数量：1端子数量：4
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
座面最大高度：1.75 mm表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子节距：2.3 mm端子位置：DUAL
宽度：3.5 mmBase Number Matches：1

NIF62514T1G 数据手册

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NIF62514  
Preferred Device  
Self−protected FET  
with Temperature and  
Current Limit  
HDPlus devices are an advanced series of power MOSFETs which  
utilize ON Semiconductor’s latest MOSFET technology process to  
achieve the lowest possible on−resistance per silicon area while  
incorporating smart features. Integrated thermal and current limits  
work together to provide short circuit protection. The devices feature  
an integrated Drain−to−Gate Clamp that enables them to withstand  
high energy in the avalanche mode. The Clamp also provides  
additional safety margin against unexpected voltage transients.  
Electrostatic Discharge (ESD) protection is provided by an integrated  
Gate−to−Source Clamp.  
http://onsemi.com  
6.0 AMPERES*  
40 VOLTS CLAMPED  
R
DS(on) = 90 mW  
Drain  
Overvoltage  
Protection  
Features  
M
PWR  
Gate  
Input  
• Current Limitation  
R
G
• Thermal Shutdown with Automatic Restart  
• Short Circuit Protection  
ESD Protection  
• Low R  
DS(on)  
• I  
Specified at Elevated Temperature  
• Avalanche Energy Specified  
DSS  
Temperature  
Limit  
Current  
Limit  
Current  
Sense  
• Slew Rate Control for Low Noise Switching  
• Overvoltage Clamped Protection  
• Pb−Free Packages are Available  
Source  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
4
SOT−223  
CASE 318E  
STYLE 3  
Rating  
Symbol Value Unit  
1
2
3
Drain−to−Source Voltage Internally Clamped  
Drain−to−Gate Voltage Internally Clamped  
V
40  
40  
Vdc  
Vdc  
DSS  
DGR  
V
(R = 1.0 MW)  
GS  
MARKING DIAGRAM  
Gate−to−Source Voltage  
Drain Current  
V
"16  
Vdc  
GS  
I
D
Internally  
Limited  
− Continuous @ T = 25°C  
I
1
A
D
− Continuous @ T = 100°C  
I
GATE  
4
A
DM  
− Pulsed (t ≤ 10 ms)  
p
2
DRAIN  
DRAIN  
Total Power Dissipation @ T = 25°C (Note 1)  
P
1.1  
1.73  
8.93  
W
°C/W  
mJ  
A
D
@ T = 25°C (Note 2)  
A
3
@ T = 25°C (Note 3)  
A
SOURCE  
Thermal Resistance, Junction−to−Tab  
Junction−to−Ambient (Note 1)  
Junction−to−Ambient (Note 2)  
R
14  
114  
72.3  
q
JT  
JA  
JA  
R
R
q
q
A
Y
= Assembly Location  
= Year  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
300  
W
= Work Week  
(V = 25 Vdc, V = 5.0 Vdc,  
DD  
GS  
62514 = Specific Device Code  
V
= 40 Vdc, I = 2.8 Apk, L = 80 mH,  
DS  
L
G
= Pb−Free Package  
R
= 25 W)  
G
(Note: Microdot may be in either location)  
Operating and Storage Temperature Range  
T , T  
J
−55 to  
150  
°C  
stg  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Mounted onto min pad board.  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
2. Mounted onto 1″ pad board.  
3. Mounted onto large heatsink.  
*Limited by the current limit circuit.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 5  
NIF62514/D  
 
123456

中文翻译

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NIF62514T1G 替代型号

型号 品牌 替代类型 描述 数据表
NCV8405ASTT3G ONSEMI

完全替代

 Self-Protected Low Side Driver with Temperature and Current Limit
NCV8405ASTT1G ONSEMI

类似代替

 Self-Protected Low Side Driver with Temperature and Current Limit
NIF62514T3G ONSEMI

类似代替

 Self−protected FET with Temperature and Current Limit

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