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NIF5002NT3G

更新时间： 2024-10-14 03:43:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 74K
描述
Self−Protected FET with Temperature and Current Limit

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中文翻译

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NIF5002NT3G 数据手册

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NIF5002N  
Preferred Device  
Self−Protected FET  
with Temperature and  
Current Limit  
42 V, 2.0 A, Single N−Channel, SOT−223  
http://onsemi.com  
HDPlust devices are an advanced series of power MOSFETs  
which utilize ON Semiconductors latest MOSFET technology process  
to achieve the lowest possible on−resistance per silicon area while  
incorporating smart features. Integrated thermal and current limits  
work together to provide short circuit protection. The devices feature  
an integrated Drain−to−Gate Clamp that enables them to withstand  
high energy in the avalanche mode. The Clamp also provides  
additional safety margin against unexpected voltage transients.  
Electrostatic Discharge (ESD) protection is provided by an integrated  
Gate−to−Source Clamp.  
V
(BR)DSS  
R
TYP  
I
MAX  
DS(ON)  
(Clamped)  
D
42 V  
165 mW @ 10 V  
2.0 A*  
*Max current limit value is dependent on input  
condition.  
Drain  
Overvoltage  
Protection  
M
PWR  
Gate  
Input  
R
G
Features  
• Current Limitation  
ESD Protection  
• Thermal Shutdown with Automatic Restart  
• Short Circuit Protection  
Temperature  
Limit  
Current  
Limit  
Current  
Sense  
• I  
Specified at Elevated Temperature  
DSS  
• Avalanche Energy Specified  
• Slew Rate Control for Low Noise Switching  
• Overvoltage Clamped Protection  
• Pb−Free Packages are Available  
Source  
4
SOT−223  
CASE 318E  
STYLE 3  
Applications  
1
2
3
• Lighting  
• Solenoids  
• Small Motors  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
1
Rating  
Symbol  
Value  
42  
Unit  
V
GATE  
4
2
3
Drain−to−Source Voltage Internally Clamped  
V
DSS  
DGR  
DRAIN  
DRAIN  
Drain−to−Gate Voltage Internally Clamped  
V
42  
V
(R = 1.0 MW)  
G
SOURCE  
Gate−to−Source Voltage  
Continuous Drain Current  
Power Dissipation  
V
"14  
V
GS  
I
Internally Limited  
D
A
Y
W
= Assembly Location  
= Year  
= Work Week  
@ T = 25°C (Note 1)  
P
1.1  
1.7  
8.9  
W
A
D
@ T = 25°C (Note 2)  
A
@ T = 25°C (Note 3)  
T
5002N = Specific Device Code  
Operating Junction and Storage Temperature  
T , T  
−55 to  
150  
°C  
J
stg  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
150  
mJ  
(V = 32 V, V = 5.0 V, I = 1.0 A,  
DD  
G
PK  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
L = 300 mH, R  
= 25 W)  
G(ext)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
dimensions section on page 4 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 7  
NIF5002N/D  
12345

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NIF5002NT3G 替代型号

型号 品牌 替代类型 描述 数据表
NIF5002NT1G ONSEMI

完全替代

 Self−Protected FET with Temperature and Current Limit
NCV8402ASTT3G ONSEMI

类似代替

 Self-Protected Low Side Driver with Temperature and Current Limit
NIF5002NT1 ONSEMI

类似代替

 Self-Protected FET with Temperature and Current Limit

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