Datasheet > NGD8205ANT4G

NGD8205ANT4G

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		栅驱动双极性晶体管装置驱动器
页数	文件大小	规格书
9页	488K
描述
这款逻辑电平绝缘栅双极晶体管（IGBT）配有集成ESD与过压箝位保护装置的单片电路，可用于感应线圈驱动器应用。主要用途包括点火、直接燃油喷射或需要高电压与高电流切换的应用。功能与特色: 应用: 终端产品:

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NGD8205ANT4G 数据手册

Datasheet

LGD8205ATI

350 V, 20 A N-Channel Ignition IGBT

Product Summary

Characteristic

Value

350

Unit

CES

I_C

Description

This Logic Level Insulated Gate Bipolar Transistor

(IGBT) features monolithic circuitry integrating ESD

inductive coil driver applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever

high voltage and high current switching is required.

Agency Approvals

Environm ental Approvals

Features

•

and Driver-on-Coil

Applications

• DPAK Package Offers Smaller Footprint for

Increased Board Space

Circuit Diagram

•

Protection

Voltage Clamp Limits Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage Interfaces Power Loads to

Logic or Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• Optional Gate Resistor (R_G) and Gate-Emitter

Resistor (R_GE)

• AEC-Q101 Qualified

•

Functional Diagram

Specifications are subject to change without notice.

Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Revised: 5/7/2020

12 3 4 5 6 7...9

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