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NGD8201BNT4G

更新时间： 2024-11-11 20:11:11
品牌 Logo 应用领域
力特 - LITTELFUSE 栅
页数 文件大小 规格书
6页 1403K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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NGD8201BNT4G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：,Reach Compliance Code：unknown
风险等级：5.73Base Number Matches：1

NGD8201BNT4G 数据手册

 浏览型号NGD8201BNT4G的Datasheet PDF文件第2页浏览型号NGD8201BNT4G的Datasheet PDF文件第3页浏览型号NGD8201BNT4G的Datasheet PDF文件第4页浏览型号NGD8201BNT4G的Datasheet PDF文件第5页浏览型号NGD8201BNT4G的Datasheet PDF文件第6页 
NGD8201B  
Ignition IGBT, 20 A, 400 V  
N−Channel DPAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Over−Voltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
Littelfuse.com  
Features  
20 AMPS, 400 VOLTS  
VCE(on) 1.8 V @  
IC = 10 A, VGE 4.5 V  
• Ideal for Coil−on−Plug Applications  
• DPAK Package Offers Smaller Footprint for Increased Board Space  
• Gate−Emitter ESD Protection  
• Temperature Compensated Gate−Collector Voltage Clamp Limits  
Stress Applied to Load  
C
• Integrated ESD Diode Protection  
• New Design Increases Unclamped Inductive Switching (UIS) Energy  
Per Area  
G
• Low Threshold Voltage Interfaces Power Loads to Logic or  
Microprocessor Devices  
R
GE  
• Low Saturation Voltage  
• High Pulsed Current Capability  
E
• Emitter Ballasting for Short−Circuit Capability  
• These are Pb−Free Devices  
4
DPAK  
CASE 369C  
STYLE 7  
2
3
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Collector−Emitter Voltage  
Collector−Gate Voltage  
Gate−Emitter Voltage  
Symbol Value  
Unit  
MARKING DIAGRAM  
1
Gate  
V
V
430  
430  
18  
V
DC  
V
DC  
V
DC  
CES  
CER  
AYWW  
4
V
2
GE  
NGD  
8201BG  
Collector  
Collector  
Collector Current−Continuous  
I
C
15  
50  
A
DC  
A
AC  
@ T = 25°C − Pulsed  
C
3
ESD (Human Body Model)  
R = 1500 Ω, C = 100 pF  
ESD  
kV  
Emitter  
8.0  
NGD8201B= Device Code  
ESD (Machine Model) R = 0 Ω, C = 200 pF  
ESD  
800  
V
A
= Assemlby Location  
Y
WW  
G
= Year  
= Work Week  
= Pb−Free Device  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
115  
0.77  
Watts  
W/°C  
C
Operating and Storage Temperature Range  
T , T  
−55 to  
°C  
J
stg  
+175  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Device  
NGD8201BNT4G  
Package  
Shipping  
2500/Tape & Reel  
DPAK  
(Pb−Free)  
Specifications subject to change without notice.  
2016 Littelfuse, Inc.  
Publication Order Number:  
September 19, 2016 - Rev. 2  
NGD8201B/D  
123456

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