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NES6287Z PDF预览

NES6287Z

更新时间: 2024-09-24 14:43:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网放大器晶体管
页数 文件大小 规格书
2页 71K
描述
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-259AA, Metal, 3 Pin, TO-259AA, 3 PIN

NES6287Z 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-259AA
包装说明:FLANGE MOUNT, R-MSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.92最大集电极电流 (IC):20 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100JEDEC-95代码:TO-259AA
JESD-30 代码:R-MSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

NES6287Z 数据手册

 浏览型号NES6287Z的Datasheet PDF文件第2页 

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