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NES6060 PDF预览

NES6060

更新时间: 2024-09-24 21:01:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
2页 72K
描述
Power Field-Effect Transistor, 10.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN

NES6060 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-254AA
包装说明:FLANGE MOUNT, S-MSFM-P3针数:3
Reach Compliance Code:compliant风险等级:5.67
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):10.5 A最大漏源导通电阻:0.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-MSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:METAL封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):42 A
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NES6060 数据手册

 浏览型号NES6060的Datasheet PDF文件第2页 

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