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UPG2008TB-A PDF预览

UPG2008TB-A

更新时间: 2024-01-07 13:51:02
品牌 Logo 应用领域
日电电子 - NEC 射频和微波开关射频开关微波开关光电二极管
页数 文件大小 规格书
10页 58K
描述
SPDT, 500MHz Min, 2500MHz Max, 0.9dB Insertion Loss-Max, 2.0 X 1.25 MM, 0.9 MM HEIGHT, PLASTIC, SUPERMINI-6

UPG2008TB-A 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.63
Is Samacsys:N构造:COMPONENT
最大输入功率 (CW):28.06 dBm最大插入损耗:0.85 dB
JESD-609代码:e6最大工作频率:2500 MHz
最小工作频率:500 MHz最高工作温度:85 °C
最低工作温度:-45 °C射频/微波设备类型:SPDT
端子面层:Tin/Bismuth (Sn/Bi)Base Number Matches:1

UPG2008TB-A 数据手册

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DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG2008TB  
L, S-BAND SPDT SWITCH  
DESCRIPTION  
The µPG2008TB is an L, S-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for  
digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz  
to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package that is smaller than  
usual 6-pin minimold easy to install and contributes to miniaturizing the system.  
FEATURES  
Low insertion loss  
: LINS = 0.3 dB TYP. @ Vcont = +3.0 V/0 V, f = 1 GHz  
LINS = 0.4 dB TYP. @ Vcont = +3.0 V/0 V, f = 2 GHz  
: ISL = 27 dB TYP. @ Vcont = +3.0 V/0 V, f = 0.5 to 2.0 GHz  
High isolation  
6-pin super minimold package (2.0 × 1.25 × 0.9 mm)  
APPLICATION  
L, S-band digital cellular or cordless telephone  
BuletoothTM, W-LAN and WLL applications  
ORDERING INFORMATION  
Part Number  
Package  
Marking  
G3D  
Supplying Form  
Embossed tape 8 mm wide  
µPG2008TB-E3  
6-pin super minimold  
Pin 1, 2, 3 face the perforation side of the tape  
Qty 3 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: µPG2008TB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PG10193EJ01V0DS (1st edition)  
Date Published November 2002 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2002  

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