UPG139GV

更新时间： 2024-01-14 05:51:46

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

UPG139GV 技术参数

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG139GV

L-BAND DPDT MMIC SWITCH

DESCRIPTION

The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless

telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage

operation. It is housed in a very small 8-pin plastic SSOP package available on tape-and-reel and easy to install and

contributes to miniaturizing the systems.

FEATURES

{ High-Power Switching : Pin(1 dB) = +34 dBm typ. @ANT1, 2-TX, V^DD= 3.0 V, V^CONT= 3.6 V, f = 100 M to 2 GHz

Pin(0.5 dB) = +36 dBm typ. @ANT1, 2-TX, V^DD= 5.0 V, V^CONT= 5.0 V, f = 100 M to 2 GHz

{ Low Insertion Loss

: Lins1 = 0.70 dB typ. @ANT1, 2-TX, V^DD= 3.0 V, V^CONT= 3.6 V, f = 1 GHz

Lins4 = 0.85 dB typ. @ANT1, 2-RX, V^DD= 3.0 V, V^CONT= 3.6 V, f = 1 GHz

{ Small 8-pin SSOP (175 mil) Package

APPLICATION

{ Digital Cellular: PDC, GSM, IS-95, IS-136 etc.

{ PCS, PHS Base station etc.

ORDERING INFORMATION

Part Number

Package

Packing Form

µPG139GV-E1

8-pin SSOP (175 mil)

Carrier tape width is 12 mm, Quantity is 2 kpcs per reel.

Remark For sample order, please contact your local NEC sales office. (Part number for sample order: µPG139GV)

Caution The IC must be handled with care to prevent static discharge because its circuit composed of GaAs

MESFET.

The information in this document is subject to change without notice.

Document No. P13144EJ2V0DS00 (2nd edition)

Date Published July 1998 N CP(K)

Printed in Japan

The mark shows major revised points.

1998

12 3 4 5 6 7 8

下载PDF