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UPG133G PDF预览

UPG133G

更新时间: 2024-01-13 15:11:46
品牌 Logo 应用领域
日电电子 - NEC 射频和微波开关射频开关微波开关光电二极管
页数 文件大小 规格书
12页 88K
描述
L-BAND SPDT SWITCH

UPG133G 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
构造:COMPONENT最大工作频率:2500 MHz
最小工作频率:100 MHz射频/微波设备类型:SPDT
Base Number Matches:1

UPG133G 数据手册

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DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG133G  
L-BAND SPDT SWITCH  
DESCRIPTION  
UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular  
or cordless telephone application.  
The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.  
It housed in an original 8 pin SSOP that is smaller than usual 8 pin SOP and easy to install and contributes to  
miniaturizing the system.  
It can be used in wide-band switching applications.  
FEATURES  
Maximum transmission power : 0.25 W (typ.)  
Low insertion loss  
High switching speed  
Small package  
:
:
:
0.6 dB (typ.) at f = 2 GHz  
10 ns  
8 pins SSOP  
APPLICATION  
Digital cordless telephone  
:
PHS, PCS, DECT etc.  
Digital hand-held cellular phone, WLAN  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
8 pin plastic SSOP  
PACKING FORM  
Carrier tape width 12 mm.  
QTY 2kp/Reel.  
µPG133G-E1  
For evaluation sample order, please contact your local NEC sales office.  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Control Voltage  
VCONT  
Pin  
–6 to +0.6  
25  
V
dBm  
W
Input Power  
Total Power Dissipation  
Operating Case Temperature  
Storage Temperature  
Ptot  
0.2  
Topt  
Tstg  
–65 to +90  
–65 to +150  
˚C  
˚C  
CAUTION: The IC must be handled with care to prevent static discharge because its circuit is composed  
of GaAs MES FET.  
Document No. P10733EJ2V0DS00 (2nd edition)  
Date Published April 1996 P  
Printed in Japan  
1996  
©

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