NEC's SiGe
LOW NOISE AMPLIFIER FOR
UPC8211TK
GPS/MOBILE COMMUNICATIONS
INTERNAL BLOCK DIAGRAM
FEATURES
•
•
•
LOW NOISE:
NF = 1.3 dB TYP.
HIGH GAIN:
GP = 18.5 dB TYP.
1
2
3
6
5
4
Input
GND
Vcc
LOW CURRENT CONSUMPTION:
ICC = 3.5 mA TYP. at VCC = 3.0 V
GND
•
•
BUILT-IN POWER SAVE FUNCTION:
HIGH-DENSITY SURFACE MOUNTING:
6-pin lead less minimold package ( 1.5 x 1.3 x 0.55 mm)
Bias
PS
Output
APPLICATION
DESCRIPTION
NEC's UPC8211TK is a silicon germanium (SiGe) monolithic
integrated circuit designed as low noise amplifier for GPS and
as a general low nois amplifier for mobile communications.
• Low Noise amplifier for GPS and mobile communications
• General purpose low noise amplifier
The package is 6-pin lead-less minimold (1.5 x 1.3 x 0.55 mm)
suitable for surface mount and optimized for very densely
populated compact designs.
This IC is manufactured using NEC's 60 GHz fTUHS2 (Ultra
High Speed Process) silicon bipolar process. This process
can realize excellent low noise peformance and low power
consumption simultaneously.
NEC'sstringentqualityassuranceandtestproceduresensure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS,
(Unless otherwise specified, TA = +25°C, VCC = 3.0 V, fin = 1575 MHz, VPS = 3.0 V)
PART NUMBER
PACKAGE OUTLINE
UPC8211TK
S06
SYMBOLS
PARAMETERS AND CONDITIONS
Circuit Current (no input signal)
UNITS
mA
μA
MIN
–
TYP
3.5
–
MAX
4.5
1
ICC
At power save mode (VPS < 0.8V)
Power Gain
–
GP
NF
dB
15.5
–
18.5
1.3
-12
-7.5
-14.5
-32.5
–
21.5
1.5
–
Noise Figure
dB
IIP3
3rd Order Distortion Input Intercept Point (Gain = 18.5 dB)
Input Return Loss
dBm
dB
–
RLIN
RLOUT
ISO
–
-6
Output Return Loss
dB
–
-10
–
Isolation
dBm
V
–
VPS ON
VPS OFF
Flat
Rising Voltage from Power-Saving Mode
Falling Voltage from Power-Saving Mode
Gain Flatness (fin ±2.5 MHz)
Gain1 dB Compression Output Power
Output Power
2.2
–
–
V
–
0.8
Δ0.5
–
dB
–
–
Po(1 dB)
Po
dBm
dBm
–
-4
-1.5
+2.0
–
California Eastern Laboratories