5秒后页面跳转
UPC8211TK-E2 PDF预览

UPC8211TK-E2

更新时间: 2024-01-23 23:08:52
品牌 Logo 应用领域
日电电子 - NEC 放大器全球定位系统通信
页数 文件大小 规格书
3页 116K
描述
NECs SiGe LOW NOISE AMPLIFIER FOR GPS/MO BILE COMMUNICATIONS

UPC8211TK-E2 数据手册

 浏览型号UPC8211TK-E2的Datasheet PDF文件第2页浏览型号UPC8211TK-E2的Datasheet PDF文件第3页 
NEC's SiGe  
LOW NOISE AMPLIFIER FOR  
UPC8211TK  
GPS/MOBILE COMMUNICATIONS  
INTERNAL BLOCK DIAGRAM  
FEATURES  
LOW NOISE:  
NF = 1.3 dB TYP.  
HIGH GAIN:  
GP = 18.5 dB TYP.  
1
2
3
6
5
4
Input  
GND  
Vcc  
LOW CURRENT CONSUMPTION:  
ICC = 3.5 mA TYP. at VCC = 3.0 V  
GND  
BUILT-IN POWER SAVE FUNCTION:  
HIGH-DENSITY SURFACE MOUNTING:  
6-pin lead less minimold package ( 1.5 x 1.3 x 0.55 mm)  
Bias  
PS  
Output  
APPLICATION  
DESCRIPTION  
NEC's UPC8211TK is a silicon germanium (SiGe) monolithic  
integrated circuit designed as low noise amplier for GPS and  
as a general low nois amplier for mobile communications.  
• Low Noise amplier for GPS and mobile communications  
• General purpose low noise amplier  
The package is 6-pin lead-less minimold (1.5 x 1.3 x 0.55 mm)  
suitable for surface mount and optimized for very densely  
populated compact designs.  
This IC is manufactured using NEC's 60 GHz fTUHS2 (Ultra  
High Speed Process) silicon bipolar process. This process  
can realize excellent low noise peformance and low power  
consumption simultaneously.  
NEC'sstringentqualityassuranceandtestproceduresensure  
the highest reliability and performance.  
ELECTRICAL CHARACTERISTICS,  
(Unless otherwise specied, TA = +25°C, VCC = 3.0 V, fin = 1575 MHz, VPS = 3.0 V)  
PART NUMBER  
PACKAGE OUTLINE  
UPC8211TK  
S06  
SYMBOLS  
PARAMETERS AND CONDITIONS  
Circuit Current (no input signal)  
UNITS  
mA  
μA  
MIN  
TYP  
3.5  
MAX  
4.5  
1
ICC  
At power save mode (VPS < 0.8V)  
Power Gain  
GP  
NF  
dB  
15.5  
18.5  
1.3  
-12  
-7.5  
-14.5  
-32.5  
21.5  
1.5  
Noise Figure  
dB  
IIP3  
3rd Order Distortion Input Intercept Point (Gain = 18.5 dB)  
Input Return Loss  
dBm  
dB  
RLIN  
RLOUT  
ISO  
-6  
Output Return Loss  
dB  
-10  
Isolation  
dBm  
V
VPS ON  
VPS OFF  
Flat  
Rising Voltage from Power-Saving Mode  
Falling Voltage from Power-Saving Mode  
Gain Flatness (n ±2.5 MHz)  
Gain1 dB Compression Output Power  
Output Power  
2.2  
V
0.8  
Δ0.5  
dB  
Po(1 dB)  
Po  
dBm  
dBm  
-4  
-1.5  
+2.0  
California Eastern Laboratories  

与UPC8211TK-E2相关器件

型号 品牌 描述 获取价格 数据表
UPC8211TK-E2-A CEL SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS

获取价格

UPC8211TK-E2-A NEC Narrow Band Low Power Amplifier, 1.50 X 1.33 MM, 0.55 MM HEIGHT, LEAD FREE, LEADLESS MINIM

获取价格

UPC8215TU CEL SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS

获取价格

UPC8215TU-E2 CEL SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS

获取价格

UPC8215TU-E2-A CEL SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS

获取价格

UPC8218T5A-E1 NEC Narrow Band Low Power Amplifier, 3.30 X 2.30 MM, 0.60 MM HEIGHT, PLASTIC, TSON-16

获取价格