是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | CYLINDRICAL, O-PBCY-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.75 | Is Samacsys: | N |
其他特性: | GATE PROTECTED, HIGH INPUT IMPEDANCE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 1 A |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | O-PBCY-T3 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.75 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SK1272-AZ | NEC | Small Signal Field-Effect Transistor, 1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-o |
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2SK1273 | NEC | N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
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2SK1273 | KEXIN | MOS Field Effect Transistor |
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2SK1273 | TYSEMI | Directly driver by Ics having a 5V power source. Has low on-satate resistance |
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2SK1273-AY | RENESAS | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2A I(D),SOT-89 |
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2SK1273-AZ | NEC | Power Field-Effect Transistor, 2A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-ox |
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