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2SJ647 PDF预览

2SJ647

更新时间: 2024-01-24 17:17:54
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 65K
描述
MOS FIELD EFFECT TRANSISTOR

2SJ647 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
Is Samacsys:N配置:Single
最大漏极电流 (Abs) (ID):0.4 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

2SJ647 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ647  
P-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The 2SJ647 is a switching device which can be driven directly  
by a 2.5 V power source.  
2.1 ± 0.1  
The 2SJ647 features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such  
as power switch of portable machine and so on.  
1.25 ± 0.1  
2
1
FEATURES  
2.5 V drive available  
Low on-state resistance  
3
RDS(on)1 = 1.45 MAX. (VGS = 4.5 V, ID = 0.2 A)  
RDS(on)2 = 1.55 MAX. (VGS = 4.0 V, ID = 0.2 A)  
RDS(on)3 = 2.98 MAX. (VGS = 2.5 V, ID = 0.15 A)  
Marking  
1
: Source  
ORDERING INFORMATION  
2 : Gate  
3 : Drain  
PART NUMBER  
PACKAGE  
2SJ647  
SC-70 (SSP)  
Remark Marking: H22  
EQUIVALENT CIRCUIT  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TA = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
V
V
20  
m12  
m0.4  
Drain  
A
Body  
Diode  
Gate  
A
m1.6  
0.2  
Total Power Dissipation Note2  
W
°C  
°C  
Gate  
Protection  
Diode  
Channel Temperature  
Tch  
150  
Source  
Storage Temperature  
Tstg  
55 to +150  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Mounted on FR-4 board of 2500 mm2 x 1.1 mm.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated  
voltage may be applied to this device.  
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with  
caution for electrostatic discharge.  
VESD ±100 V TYP. at C = 200 pF, R = 0, Single Pulse.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No.  
D16530EJ1V0DS00 (1st edition)  
Date Published January 2003 NS CP(K)  
Printed in Japan  
2003  

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