2SJ626

更新时间： 2024-02-18 16:37:39

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
8页	67K
描述
MOS FIELD EFFECT TRANSISTOR

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技术参数
数据手册

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2SJ626 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

2SJ626 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ626

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SJ626 is a switching device which can be driven directly

by a 4.0 V power source.

+0.1

–0.05

0.4

+0.1

–0.06

0.16

The 2SJ626 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

0 to 0.1

FEATURES

• 4.0 V drive available

• Low on-state resistance

0.65

R^DS(on)1= 388 mΩ MAX. (V^GS= –10 V, I^D= –1.0 A)

R^DS(on)2= 514 mΩ MAX. (V^GS= –4.5 V, I^D= –1.0 A)

R^DS(on)3= 556 mΩ MAX. (V^GS= –4.0 V, I^D= –1.0 A)

0.95 0.95

1.9

0.9 to 1.1

2.9 ±0.2

: Gate

ORDERING INFORMATION

2 : Source

3 : Drain

PART NUMBER

2SJ626

PACKAGE

SC-96 (Mini Mold Thin Type)

EQUIVALENT CIRCUIT

Marking: XN

Drain

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

Total Power Dissipation

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

–60

Body

Diode

Gate

m20

m1.5

Gate

Protection

Diode

m6.0

0.2

Source

°C

Total Power Dissipation ^Note2

P^T2

1.25

150

Channel Temperature

Tch

Storage Temperature

Tstg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published June 2002 NS CP(K)

Printed in Japan

D15962EJ1V0DS00 (1st edition)

2002

12 3 4 5 6 7 8

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