2SJ621

更新时间： 2024-02-25 01:04:09

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
8页	74K
描述
MOS FIELD EFFECT TRANSISTOR

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技术参数
数据手册

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2SJ621 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
配置：	Single	最大漏极电流 (Abs) (ID)：	3.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1.25 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SJ621 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ621

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SJ621 is a switching device which can be driven directly

by a 1.8 V power source.

+0.1

–0.05

0.4

+0.1

–0.06

0.16

This device features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

0 to 0.1

FEATURES

• 1.8 V drive available

• Low on-state resistance

R^DS(on)1= 44 mΩ MAX. (V^GS= –4.5 V, I^D= –2.0 A)

R^DS(on)2= 56 mΩ MAX. (V^GS= –3.0 V, I^D= –2.0 A)

R^DS(on)3= 62 mΩ MAX. (V^GS= –2.5 V, I^D= –2.0 A)

R^DS(on)4= 105 mΩ MAX. (V^GS= –1.8 V, I^D= –1.5 A)

0.65

0.95 0.95

1.9

0.9 to 1.1

2.9 ±0.2

: Gate

ORDERING INFORMATION

2 : Source

3 : Drain

PART NUMBER

2SJ621

PACKAGE

SC-96 (Mini Mold Thin Type)

Marking: XG

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

–12

EQUIVALENT CIRCUIT

m8.0

m3.5

Drain

m12

0.2

Body

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (T^A= 25°C) ^Note2

Channel Temperature

°C

Diode

Gate

P^T2

1.25

150

T^ch

Gate

Protection

Diode

Storage Temperature

T^stg

–55 to +150 °C

Source

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published May 2002 NS CP(K)

Printed in Japan

D15634EJ1V0DS00 (1st edition)

2001

12 3 4 5 6 7 8

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