2SJ559

更新时间： 2024-01-20 20:55:53

品牌	Logo	应用领域
日电电子 - NEC		晶体开关小信号场效应晶体管光电二极管
页数	文件大小	规格书
8页	51K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

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技术参数
数据手册

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2SJ559 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	0.1 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	0.2 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SJ559 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ559

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The 2SJ559 is a switching device which can be driven directly

by a 2.5 V power source.

+0.1

–0.05

0.1

0.3 ± 0.05

The 2SJ559 has excellent switching characteristics, and is

suitable for use as a high-speed switching device in digital

circuits.

0 to 0.1

FEATURES

• Can be driven by a 2.5 V power source.

• Low gate cut-off voltage.

+0.1

–0

0.2

0.6

0.5

0.75 ± 0.05

1.0

1.6 ± 0.1

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

DSS

EQUIVALENT CIRCUIT

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

–30

GSS

Drain

D(DC)

0.1

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Channel Temperature

Storage Temperature

D(pulse)

0.4

200

°C

Internal Diode

150

Gate

stg

–55 to +150 °C

Gate Protect

Diode

Source

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 3.0cm²× 0.64 mm

Marking : C1

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published June 1999 NS CP(K)

Printed in Japan

D13801EJ1V0DS00 (1st edition)

1999

12 3 4 5 6 7 8

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与2SJ559相关器件

型号	品牌	描述	获取价格	数据表
2SJ559-A	NEC	Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal	获取价格
2SJ559-AT	RENESAS	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-416	获取价格
2SJ559-T1	RENESAS	2SJ559-T1	获取价格
2SJ559-T2	RENESAS	2SJ559-T2	获取价格
2SJ56	ETC	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-3	获取价格
2SJ560	SANYO	Ultrahigh-Speed Switching Applications	获取价格