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2SJ492-S-AZ

更新时间: 2024-01-24 00:40:51
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 73K
描述
Power Field-Effect Transistor, 20A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

2SJ492-S-AZ 技术参数

生命周期:Transferred零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.32
雪崩能效等级(Eas):40 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.185 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):80 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ492-S-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ492  
SWITCHING  
P-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SJ492  
This product is P-Channel MOS Field Effect Transistor  
designed for DC/DC converters and motor/lamp driver  
circuits.  
PACKAGE  
TO-220AB  
TO-262  
2SJ492-S  
2SJ492-ZJ  
TO-263  
FEATURES  
Low on-state resistance  
DS(on)1  
GS  
D
R
R
= 100 m(MAX.) (V = –10 V, I = –10 A)  
DS(on)2  
GS  
D
= 185 m(MAX.) (V = –4 V, I = –10 A)  
iss  
iss  
Low C : C = 1210 pF (TYP.)  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
–60  
V
V
DS  
GSS(AC)  
GSS(DC)  
# 20  
–20, 0  
# 20  
Gate to Source Voltage (V = 0 V)  
V
Note1  
DS  
Gate to Source Voltage (V = 0 V)  
V
V
D(DC)  
Drain Current (DC)  
I
A
Drain Current (pulse) Note2  
D(pulse)  
# 80  
I
A
A
T
Total Power Dissipation (T = 25°C)  
P
1.5  
W
W
°C  
°C  
A
C
T
P
Total Power Dissipation (T = 25°C)  
70  
ch  
Channel Temperature  
T
150  
stg  
Storage Temperature  
T
–55 to +150  
–20  
Single Avalanche Current Note3  
Single Avalanche Energy Note3  
AS  
I
AS  
E
40  
mJ  
Notes 1. f = 20 kHz, Duty Cycle 10% (+Side)  
2. PW 10 µs, Duty Cycle 1 %  
3. Starting Tch = 25°C, RA = 25, VGS = –20V 0  
THERMAL RESISTANCE  
th(ch-C)  
Channel to Case  
R
1.79  
83.3  
°C/W  
°C/W  
th(ch-A)  
R
Channel to Ambient  
The information in this document is subject to change without notice.  
D11264EJ1V0DS00 (1st edition)  
Document No.  
Date Published December 1998 NS CP(K)  
Printed in Japan  
1998  
©

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