5秒后页面跳转
2SJ353 PDF预览

2SJ353

更新时间: 2024-01-21 10:26:42
品牌 Logo 应用领域
日电电子 - NEC 晶体开关小信号场效应晶体管
页数 文件大小 规格书
6页 60K
描述
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

2SJ353 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.9Is Samacsys:N
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2SJ353 数据手册

 浏览型号2SJ353的Datasheet PDF文件第2页浏览型号2SJ353的Datasheet PDF文件第3页浏览型号2SJ353的Datasheet PDF文件第4页浏览型号2SJ353的Datasheet PDF文件第5页浏览型号2SJ353的Datasheet PDF文件第6页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ353  
P-CHANNEL MOS FET  
FOR HIGH-SPEED SWITCHING  
The 2SJ353 is a P-channel MOS FET of a vertical type and is  
PACKAGE DIMENSIONS (in mm)  
a switching element that can be directly driven by the output of an  
IC operating at 5 V.  
7.0 MAX.  
1.2  
This product has a low ON resistance and superb switching  
characteristics and is ideal for driving the actuators and DC/DC  
converters.  
0.8 ±0.1  
0.6 ±0.1  
0.6 ±0.1  
FEATURES  
Radial taping supported  
0.6 ±0.1  
Can be directly driven by output of 5-V IC  
Low ON resistance  
0.55 ±0.1  
1.7  
1.7  
RDS(on) = 0.68 MAX. @VGS = –4 V, ID = –0.8 A  
RDS(on) = 0.37 MAX. @VGS = –10 V, ID = –1.0 A  
GD S  
EQUIVALENT CIRCUIT  
Drain (D)  
Internal  
diode  
Gate (G)  
Gate  
protection  
diode  
PIN CONNECTIONS  
Source (S)  
S: Source  
D: Drain  
G: Gate  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
PARAMETER  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
SYMBOL  
VDSS  
TEST CONDITIONS  
RATING  
–60  
UNIT  
VGS = 0  
VDS = 0  
V
V
A
A
VGSS  
±20/+10  
±1.5  
ID(DC)  
Drain Current (Pulse)  
ID(pulse)  
PW 10 ms,  
±3.0  
Duty cycle 1 %  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
PT  
1.0  
150  
W
˚C  
˚C  
Tch  
Tstg  
–55 to +150  
Document No. D11216EJ1V0DS00 (1st edition)  
Date Published June 1996 P  
Printed in Japan  
1996  
©

与2SJ353相关器件

型号 品牌 描述 获取价格 数据表
2SJ355 NEC P-CHANNEL MOS FET FOR HIGH SWITCHING

获取价格

2SJ355(0)-T1-AY RENESAS 2SJ355(0)-T1-AY

获取价格

2SJ355-AZ RENESAS 2SJ355-AZ

获取价格

2SJ355-AZ NEC Power Field-Effect Transistor, 2A I(D), 30V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-

获取价格

2SJ355-T1-AZ NEC Power Field-Effect Transistor, 2A I(D), 30V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-

获取价格

2SJ355-T2-AZ RENESAS 2SJ355-T2-AZ

获取价格