是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | MP-3Z | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.45 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 2 A | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 0.25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 20 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ324-Z-AZ | NEC | Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-o |
获取价格 |
|
2SJ324-Z-E1 | NEC | Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-o |
获取价格 |
|
2SJ324-Z-E2-AZ | RENESAS | 2SJ324-Z-E2-AZ |
获取价格 |
|
2SJ324-Z-T1 | RENESAS | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2A I(D),TO-252VAR |
获取价格 |
|
2SJ324-Z-T1-AZ | RENESAS | 2SJ324-Z-T1-AZ |
获取价格 |
|
2SJ324-Z-T2 | RENESAS | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2A I(D),TO-252VAR |
获取价格 |