生命周期: | Transferred | 零件包装代码: | SFM |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.32 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 16 A | 最大漏源导通电阻: | 0.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 64 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ302-AZ | NEC | Power Field-Effect Transistor, 16A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal |
获取价格 |
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2SJ302-Z | NEC | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-263VAR |
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|
2SJ302-Z | RENESAS | 16A, 60V, 0.1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220, 3 PIN |
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|
2SJ302-Z-AZ | NEC | Power Field-Effect Transistor, 16A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal |
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|
2SJ303 | NEC | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
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|
2SJ303-AZ | NEC | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal |
获取价格 |