生命周期: | Transferred | 零件包装代码: | SC-62 |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.37 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 1.5 A | 最大漏源导通电阻: | 1.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e6 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 3 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ197-AZ | NEC | Power Field-Effect Transistor, 1.5A I(D), 60V, 1.5ohm, 1-Element, P-Channel, Silicon, Meta |
获取价格 |
|
2SJ197-T1 | NEC | Small Signal Field-Effect Transistor, 1.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal |
获取价格 |
|
2SJ197-T1 | RENESAS | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,1.5A I(D),SC-62 |
获取价格 |
|
2SJ197-T2 | NEC | Small Signal Field-Effect Transistor, 1.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal |
获取价格 |
|
2SJ197-T2-AY | RENESAS | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,1.5A I(D),SC-62 |
获取价格 |
|
2SJ198 | NEC | P-CHANNEL MOS FET FOR SWITCHING |
获取价格 |