生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.38 |
其他特性: | GATE PROTECTED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 1 A |
最大漏源导通电阻: | 1.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ196-AZ | NEC | Small Signal Field-Effect Transistor, 1A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o |
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|
2SJ197 | NEC | P-CHANNEL MOS FET FOR SWITCHING |
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|
2SJ197 | KEXIN | MOS Fied Effect Transistor |
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|
2SJ197-AZ | NEC | Power Field-Effect Transistor, 1.5A I(D), 60V, 1.5ohm, 1-Element, P-Channel, Silicon, Meta |
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|
2SJ197-T1 | NEC | Small Signal Field-Effect Transistor, 1.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal |
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|
2SJ197-T1 | RENESAS | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,1.5A I(D),SC-62 |
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