生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.76 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 1.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 3 pF |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ181 | HITACHI | Silicon P-Channel MOS FET |
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2SJ181 | RENESAS | Silicon P Channel MOS FET |
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2SJ181(L) | HITACHI | Power Field-Effect Transistor, 25ohm, P-Channel, Metal-oxide Semiconductor FET, DPAK-3 |
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|
2SJ181(L)|2SJ181(S) | ETC |
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||
2SJ181(S) | HITACHI | Power Field-Effect Transistor, 25ohm, P-Channel, Metal-oxide Semiconductor FET, DPAK-3 |
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|
2SJ181(S)-(1) | RENESAS | TRANSISTOR,MOSFET,P-CHANNEL,600V V(BR)DSS,500MA I(D),TO-252AA |
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