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03P4MG

更新时间: 2024-01-02 19:24:27
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
6页 157K
描述
300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR

03P4MG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83Base Number Matches:1

03P4MG 数据手册

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DATA SHEET  
THYRISTORS  
03P4MG,03P6MG  
300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs  
with an average on-state current of 300 mA. The repeat peak  
off-state voltages (and reverse voltages) are 400 and 600 V.  
φ
5.2 MAX.  
Electrode connection  
1: Gate  
FEATURES  
2: Anode  
400 and 600 V high-withstanding-voltage series of products  
The non-repetitive withstanding voltage is a high 700 V, making  
it easy to harmonize the rise voltage of the surge absorber.  
High-sensitivity thyristor (IGT = 3 to 50 µA)  
3: Cathode  
*TC test bench-mark  
0.5  
Standard weight: 0.3 g  
Employs flame-retardant epoxy resin (UL94V-0)  
1.27  
2.54  
APPLICATIONS  
Leakage breakers, SSRs, various type of alarms, consumer  
electronic equipments and automobile electronic components  
1
2
3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Parameter  
Symbol  
Ratings  
Unit  
Remarks  
03P4MG  
700  
03P6MG  
700  
Non-repetitive Peak Reverse Voltage  
Non-repetitive Peak Off-state Voltage  
Repetitive Peak Reverse Voltage  
Repetitive Peak Off-state Voltage  
Average On-state Current  
VRSM  
VDSM  
VRRM  
VDRM  
IT(AV)  
IT(RMS)  
ITSM  
V
V
RGK = 1 kΩ  
700  
700  
RGK = 1 kΩ  
400  
600  
V
RGK = 1 kΩ  
400  
600  
V
RGK = 1 kΩ  
300 (TA = 30°C, Single half-wave, θ = 180°)  
mA  
mA  
A
Refer to Figure 10.  
Effective On-state Current  
470  
Refer to Figure 2.  
Surge On-state Current  
8 (f = 50 Hz, Sine half-wave, 1 cycle)  
A2s  
A/µs  
mW  
mW  
mA  
V
2
Fusing Current  
iT dt  
0.15 (1 ms t 10 ms)  
Critical Rate of On-state Current of Rise  
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Forward Current  
Peak Gate Reverse Voltage  
Junction Temperature  
dIT/dt  
PGM  
PG(AV)  
IFGM  
VRGM  
Tj  
20  
100 (f 50 Hz, Duty 10%)  
Refer to Figure 3.  
10  
100 (f 50 Hz, Duty 10%)  
6
Refer to Figure 3.  
°C  
°C  
40 to +125  
Storage Temperature  
Tstg  
55 to +150  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D15290EJ4V0DS00 (4th edition)  
Date Published February 2003 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
2002  

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