NE97833

更新时间： 2024-01-23 21:00:47

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
5页	47K
描述
PNP SILICON HIGH FREQUENCY TRANSISTOR

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数据手册

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NE97833 数据手册

PNP SILICON HIGH

FREQUENCY TRANSISTOR

NE97833

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT:

fT = 5.5 GHz TYP

• HIGH SPEED SWITCHING CHARACTERISTICS

• NPN COMPLIMENT AVAILABLE: NE02133

• HIGH INSERTION POWER GAIN:

|S21E| = 10 dB at 1 GHz

33 (SOT 23 STYLE)

DESCRIPTION

The NE97833 PNP silicon transistor is designed for

ultrahigh speed current mode switching applications and

microwave amplifiers up to 3.5 GHz. The NE97833 offers

excellent performance and reliability at low cost.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE97833

2SA1978

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth Product at VCE = -10 V, IC = -15 mA

GHz

4.0

5.5

Noise Figureat VCE = -10 V, IC = -3 mA

2.0

10.0

3.0

|S21E|

Insertion Power Gain at VCE = -10 V, IC = -15 mA, f = 1 GHz

Forward Current Gain Ratio at VCE = -10 V, IC = -15 mA

Collector Cutoff Current at VCB = -10 V, IE = 0

Emitter Cutoff Current at VBE = -2 V, IC = 0

Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz

Total Power Dissipation

8.0

hFE

ICBO

IEBO

CRE²

100

-0.1

1.0

µA

0.5

200

Notes:

1. Electronic Industrial Association of Japan.

2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

12 3 4 5

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