是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.38 | 最大集电极电流 (IC): | 0.05 A |
基于收集器的最大容量: | 0.1 pF | 集电极-发射极最大电压: | 12 V |
配置: | SINGLE | 最高频带: | S BAND |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 8500 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE97833 | NEC |
获取价格 |
PNP SILICON HIGH FREQUENCY TRANSISTOR |
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NE97833 | CEL |
获取价格 |
PNP SILICON HIGH FREQUENCY TRANSISTOR |
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NE97833-T1 | NEC |
获取价格 |
PNP SILICON HIGH FREQUENCY TRANSISTOR |
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NE97833-T1B-A | CEL |
获取价格 |
PNP SILICON HIGH FREQUENCY TRANSISTOR |
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NE98100 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 30MA I(C) | CHIP |
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NE98108 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 30MA I(C) | MICRO-X |
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NE98141 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 30MA I(C) | MICRO-TVAR |
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NE98200 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 80MA I(C) | CHIP |
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NE98203 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80MA I(C) | MACRO-X |
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NE98208 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80MA I(C) | MICRO-X |
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