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NE97733-T1B-A PDF预览

NE97733-T1B-A

更新时间: 2024-01-03 22:04:47
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管开关光电二极管
页数 文件大小 规格书
5页 49K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, PNP, LEAD FREE PACKAGE-3

NE97733-T1B-A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.38最大集电极电流 (IC):0.05 A
基于收集器的最大容量:0.1 pF集电极-发射极最大电压:12 V
配置:SINGLE最高频带:S BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):8500 MHz
Base Number Matches:1

NE97733-T1B-A 数据手册

 浏览型号NE97733-T1B-A的Datasheet PDF文件第2页浏览型号NE97733-T1B-A的Datasheet PDF文件第3页浏览型号NE97733-T1B-A的Datasheet PDF文件第4页浏览型号NE97733-T1B-A的Datasheet PDF文件第5页 
PNP SILICON HIGH  
FREQUENCY TRANSISTOR  
NE97733  
FEATURES  
• HIGH GAIN BANDWIDTH PRODUCT:  
fT = 8.5 GHz TYP  
• HIGH SPEED SWITCHING CHARACTERISTICS  
• NPN COMPLIMENT AVAILABLE: NE68133  
• HIGH INSERTION POWER GAIN:  
2
|S21E| = 12 dB at 1 GHz  
33 (SOT 23 STYLE)  
DESCRIPTION  
The NE97733 PNP silicon transistor is designed for  
ultrahigh speed current mode switching applications and  
microwave amplifiers up to 3.5 GHz. The NE97733 offers  
excellent performance and reliability at low cost.  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
EIAJ1 REGISTERED NUMBER  
PACKAGE OUTLINE  
NE97733  
2SA1977  
33  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
fT  
Gain Bandwidth Product at VCE = -8 V, IC = -20 mA  
GHz  
6.0  
8.5  
NF  
|S21E|2  
hFE  
Noise Figureat VCE = -8 V, IC = -3 mA  
dB  
dB  
1.5  
12.0  
40  
3.0  
Insertion Power Gain at VCE = -8 V, IC = -20 mA, f = 1 GHz  
Forward Current Gain Ratio at VCE = -8 V, IC = -20 mA  
Collector Cutoff Current at VCB = -10 V, IE = 0  
Emitter Cutoff Current at VBE = -1 V, IC = 0  
Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz  
Total Power Dissipation  
8.0  
20  
100  
-0.1  
-0.1  
0.1  
ICBO  
IEBO  
µA  
µA  
2
CRE  
pF  
0.5  
PT  
mW  
200  
Notes:  
1. Electronic Industrial Association of Japan.  
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.  
California Eastern Laboratories  

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